High responsivity InGaAsSb p–n photodetector for extended SWIR detection

Shafir, I.; Snapi, N.; Cohen-Elias, D.; Glozman, A.; Klin, O.; Weiss, Eliezer; Westreich, Ohad; Sicron, Noam; Katz, M.

doi:10.1063/5.0037192

Cited by 13 publications

(12 citation statements)

References 19 publications

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“…Perimeter/area dependence evaluation suggested that the photodiode was not bulk limited, therefore the full capability of these photodiodes has not yet been reached. Shafir et al 20 has reported diffusion limited current in a homojunction p-n InGaAsSb photodiode at room temperature, showing that diffusion limited current in the material is possible. The leakage current limitations in this work could be overcome with improved material growth.…”

Section: Optical and Electrical Characterizationmentioning

confidence: 99%

Development and application of quasi-planar InGaAsSb p-B-n devices for spectroscopic sensing

Hanks

Mamic

Kłos³

et al. 2023

Optical Sensors 2023

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Absorption fingerprints of substances such as glucose, acetone and CO2 fall within the short-wave infrared range (SWIR), in the wavelength range 1.7 μm -2.4 μm; improved detection of these substances will be impactful to health, wellbeing and the environment. A design of detector based on the emerging material system InGaAsSb with cut-off wavelengths in this range, 2.25 μm, is presented. By controlling the composition of the InGaAsSb, the cut-off wavelength can be extended beyond GaSb (1.7 μm) to a particular target with minimal leakage increase. Unbiased operation has been obtained using a p-B-n structure design and a quasi-planar device design with good optical power resolution (40 pW). At the current state of optimisation, D* is 9.4×10 10 Jones at 0 V bias and 2.0 μm which is approaching the much more mature extended InGaAs technology, grown mismatched on InP, with the same cut-off wavelength. InGaAsSb is grown on GaSb substrates which are increasingly popular for IR optoelectronics and being lattice matched will offer a higher yield in production compared to mismatched growth. With InGaAsSb, the GaSb-matched material system can support lattice matched epilayers exhibiting cut-off wavelengths from the near to the longwave infrared. This work looks towards future applications through evaluations and measurements of low concentration glucose solutions. These detectors show great promise for future commercial applications.

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Section: Optical and Electrical Characterizationmentioning

confidence: 99%

Development and application of quasi-planar InGaAsSb p-B-n devices for spectroscopic sensing

Hanks

Mamic

Kłos³

et al. 2023

Optical Sensors 2023

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“…Nevertheless, the overall performance of these devices is not yet satisfactory for applications at room temperature. The quaternary material InGaAsSb lattice-matched to GaSb can provide photodetectors operating at room temperature in a wavelength range beyond 1.7 μm [6][7][8][9][10] . For the development of a thermographic traffic-monitoring system that is supposed to increase safety on road and rail by localizing potentially dangerous overheated hot-spot regions, an uncooled InGaAsSb-based detector line array for imaging in the eSWIR is under investigation.…”

Section: Introductionmentioning

confidence: 99%

Investigation of InGaAsSb-based heterojunction photodiodes for extended SWIR imaging

Woerl,

Mueller,

Daumer

et al. 2023

Electro-Optical and Infrared Systems: Technology and Applications XX

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The detection in short wavelength infrared (SWIR) band, ranging from 1–3 μm, provides a wide range of applications in earth observation, plastics recycling, biology and hyperspectral imaging, gas analysis and defense. In this paper, uncooled InGaAsSb-based detectors for the wavelength range beyond 1.7 μm, the extended SWIR (eSWIR), are investigated for the later use in a thermographic traffic monitoring system that is supposed to localize potentially dangerous overheated hot-spot regions. Up to the wavelength of 1.7 μm, InGaAs lattice-matched with InP is used for photodetection in the SWIR. To reach a longer cutoff wavelength, “extended InGaAs” can be employed. This requires strained growth that leads to more growth defects and reduced yield, though. InGaAsSb, however, provides a tunable bandgap for detection beyond 1.7 μm and still enables lattice-matched growth on GaSb, which makes it a viable alternative for photodetection in the eSWIR. We have demonstrated that the bandgap of InGaAsSb can be tuned in the eSWIR by modifying the stoichiometry for lattice-matched growth on GaSb. Furthermore, we have successfully realized InGaAsSb heterojunction photodiodes with an AlGaAsSb hole barrier. At room temperature, the diodes achieve a dark current density of 0.5 mA/cm2 and a responsivity better than 1 A/W resulting in an excellent peak detectivity of 9 x 1010 cm Hz1/2/W. Thus, the highperformance detector arrays operating at room temperature are within reach in order to meet application demands.

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“…[15][16][17][18] Furthermore, a severe reduction of QE in extended InGaAs is observed that has been attributed to the relatively large band offsets present in heterojunction architectures that are usually employed to reduce Shockley-Read-Hall (SRH) junction dark current. [19][20][21][22] While HgCdTe SWIR photodetectors have shown remarkable performance levels, the reported devices appear to be based on MWIR device designs in which the absorber composition has been tailored to the desired SWIR cut-off wavelength. Although HgCdTe devices do not face the challenge of strain-engineering, they also typically require cooling to 200 K or below.…”

Section: Introductionmentioning

confidence: 99%

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

Akhavan

Umana‐Membreno

et al. 2022

J. Electron. Mater.

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In this paper, we study the limiting mechanisms and design criteria of HgCdTe photodetectors for extended shortwave infrared applications with ultra-high quantum efficiency (QE) in both n-on-p and p-on-n technologies. Numerical and analytical models are employed in order to study the possibility of achieving ultra-high QE eSWIR detectors for the operational wavelengths of approximately 2.0 μm, and our study shows that by proper design of absorber layer and doping density, such a detector can be engineered. Furthermore, we demonstrate that the Shockley–Read–Hall (SRH) lifetime, absorber layer doping density and absorber layer thickness all have an impact on the quantum efficiency whether the detector is used as a small-area pixel element in a focal plane array or as a discrete large-area detector for sensing applications.

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High responsivity InGaAsSb p–n photodetector for extended SWIR detection

Cited by 13 publications

References 19 publications

Development and application of quasi-planar InGaAsSb p-B-n devices for spectroscopic sensing

Development and application of quasi-planar InGaAsSb p-B-n devices for spectroscopic sensing

Investigation of InGaAsSb-based heterojunction photodiodes for extended SWIR imaging

Design Principles for High QE HgCdTe Infrared Photodetectors for eSWIR Applications

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