GaN-based high electron-mobility transistors for microwave and RF control applications

Drozdovski, N.V.; Caverly, Robert H.

doi:10.1109/22.981235

Cited by 32 publications

(14 citation statements)

References 11 publications

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“…The threshold voltage V TH can be defined as the gate voltage V G when Δ E F = 0, so the V TH of a C‐HEMT can be given as follows :

V_{T H} = ϕ_{normalb} - V_{normalN} - \frac{Δ E_{normalC}}{e} .

Then

V_{T H} = ϕ_{normalb} - \frac{e N_{2 D} d}{2 ϵ_{normali}} - \frac{Δ E_{normalC}}{e},

where, N 2D is the electron sheet density, and ϵ i is the dielectric constant of AlGaN material. The impact of the polarization effect cannot be ignored.…”

Section: Simulation and Modelingmentioning

confidence: 99%

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A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Zhai

et al. 2016

Physica Status Solidi (a)

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A new simple model of threshold voltage for AlGaN/GaN nanowire channel high electron mobility transistors (NC‐HEMTs) is built in this work. Firstly, four NC‐HEMTs with different nanowire channel width are fabricated, and the conventional HEMT is produced for comparison. With the nanowire channel width decreasing, the threshold voltage of NC‐HEMTs moves positively. Then, the dependence of electron concentration on the nanowire channel width is studied by Silvaco simulation software. With the nanowire channel width decreasing, the electron concentration reduces. Finally, we recognize the threshold voltage model of conventional HEMT for NC‐HEMT modeling, and the new model of threshold voltage of NC‐HEMT is obtained. This model can explain the dependence of electron concentration on nanowire channel width. The depletion region width formed by side gate is about 37 nm which is obtained by the equation of the new model.

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“…The threshold voltage V TH can be defined as the gate voltage V G when Δ E F = 0, so the V TH of a C‐HEMT can be given as follows :

V_{T H} = ϕ_{normalb} - V_{normalN} - \frac{Δ E_{normalC}}{e} .

Then

V_{T H} = ϕ_{normalb} - \frac{e N_{2 D} d}{2 ϵ_{normali}} - \frac{Δ E_{normalC}}{e},

where, N 2D is the electron sheet density, and ϵ i is the dielectric constant of AlGaN material. The impact of the polarization effect cannot be ignored.…”

Section: Simulation and Modelingmentioning

confidence: 99%

“…The threshold voltage V TH can be defined as the gate voltage V G when DE F ¼ 0, so the V TH of a C-HEMT can be given as follows [10,11]:…”

mentioning

confidence: 99%

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Zhai

et al. 2016

Physica Status Solidi (a)

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“…In the last few years GaN based HEMTs are drawing significant attentions of researchers due to their excellent high-power applications at RF, microwave, and millimeterwave frequencies [10][11][12][13]. With the advancement of GaN research, AlGaN/GaN HEMT MMICs, such as voltage controlled oscillator (VCO), mixers, low noise amplifiers (LNA) have been reported in literature [14][15].…”

Section: Choice Of Semiconductor Materials For High Temperature Hmentioning

confidence: 99%

Towards fully integrated high temperature wireless sensors using GaN-based HEMT devices

Huque

Islam

Kuruganti

2008

2008 51st Midwest Symposium on Circuits and Systems

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Wireless sensors that are capable of working in extreme environments can significantly improve the efficiency and performance of industrial processes by facilitating better monitoring and control. Gallium Nitride (GaN), a widely researched wide bandgap material, can potentially be used to fabricate components for sensing and actuation for high temperature integrated wireless sensors. In this paper we are presenting an experimental study on the performance of AlGaN/GaN HEMT at high temperatures (up to 300°C). From test results, DC and microwave parameters at different temperatures were extracted.

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“…Major developments in GaN-based semiconductors have recently led not only to the commercial production of high-brightness blue/green/amber LEDs [1] and violet LDs [2] but also to the tremendous progress in the realization of GaN-based white LEDs [3] and AlGaN/GaN high-electron-mobility transistors (HEMTs) [4,5]. However, it is difficult to obtain high-quality GaN on a sapphire substrate with an atomically flat growth surface and low density of threading dislocations because of differences in lattice constant and thermal expansion coefficient between the sapphire substrate and the GaN epilayer.…”

Section: Introductionmentioning

confidence: 99%

The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer

Cho

Kim

Park

et al. 2004

Physica Status Solidi (b)

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We investigated the structural properties of GaN epilayers grown on strained sapphire (0001) substrate by metal-organic chemical vapor deposition (MOCVD). To minimize the mismatch in lattice constants and thermal expansion coefficients between the sapphire substrate and the GaN epilayer, we imposed the strain onto the sapphire (0001) substrate using high-energy O + , Cl + , and As + ion implantation. The strained sapphire surfaces result in the different behaviors of defect generation in the GaN epilayer. Not only the ionic species but also the thickness of the low-temperature GaN buffer layer on sapphire affected the structural quality of the GaN epilayer. The present results show that O + ion-implanted substrate can provide an improved GaN epilayer using only a thin (~5 nm) buffer layer rather than using a thicker one.

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GaN-based high electron-mobility transistors for microwave and RF control applications

Cited by 32 publications

References 11 publications

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

A physics‐based threshold voltage model of AlGaN/GaN nanowire channel high electron mobility transistor

Towards fully integrated high temperature wireless sensors using GaN-based HEMT devices

The effects of strained sapphire (0001) substrate on the structural quality of GaN epilayer

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