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This paper discusses the properties of solid state switches using various technologies (GaAs-, 4H-SiC-and GaNbased MESFETs) and their suitability for microwave and RF control applications. The origins of the mechanisms dictating the values of Insertion loss, isolation, power-handling capabilities, and distortion intercept points are discussed and the variations of these performances over a wide range of temperature are reviewed. The results show that the 4H-SiC and GaN-based switches demonstrated better than + 20 dBm power handling capabilities, lower distortions, and small degradation of their intercept points over a wide range of temperature (-50 to 300 °C).

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