GaN-based PIN alpha particle detectors

Guo, Wang; Fu, Kai; Yao, Changsheng; Su, Dan; Zhang, Guoguang; Wang, Jinyan; Lü, Min

doi:10.1016/j.nima.2011.09.003

Cited by 27 publications

(12 citation statements)

References 6 publications

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“…This two Gaussian fit to alpha spectrum has also been reported in devices utilizing a p-i-n structures. 21 Subsequent research 10 verified the electric path for this double-Schottky structure: electric field lines through the epilayer are perpendicular to each Schottky contact, connected by the highly doped buffer layer.…”

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confidence: 87%

“…Based on these different types of materials, various GaN sensor structures have been fabricated for ionizing radiation detectors. For a-particle detectors, the lateral double-Schottky contact (DSC), [8][9][10] mesa, 6,12,13,19 sandwich, 14,20 and p-i-n structures 21 have been tested. For X-ray detectors, Schottky Metal-Semiconductor-Metal (MSM), 15 Schottky diode, 16,17 and p-i-n structures 22 have all been reported.…”

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confidence: 99%

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Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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With the largest band gap energy of all commercial semiconductors, GaN has found wide application in the making of optoelectronic devices. It has also been used for photodetection such as solar blind imaging as well as ultraviolet and even X-ray detection. Unsurprisingly, the appreciable advantages of GaN over Si, amorphous silicon (a-Si:H), SiC, amorphous SiC (a-SiC), and GaAs, particularly for its radiation hardness, have drawn prompt attention from the physics, astronomy, and nuclear science and engineering communities alike, where semiconductors have traditionally been used for nuclear particle detection. Several investigations have established the usefulness of GaN for alpha detection, suggesting that when properly doped or coated with neutron sensitive materials, GaN could be turned into a neutron detection device. Work in this area is still early in its development, but GaN-based devices have already been shown to detect alpha particles, ultraviolet light, X-rays, electrons, and neutrons. Furthermore, the nuclear reaction presented by 14N(n,p)14C and various other threshold reactions indicates that GaN is intrinsically sensitive to neutrons. This review summarizes the state-of-the-art development of GaN detectors for detecting directly and indirectly ionizing radiation. Particular emphasis is given to GaN's radiation hardness under high-radiation fields.

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confidence: 87%

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confidence: 99%

Review of using gallium nitride for ionizing radiation detection

Wang

Mulligan

Brillson

et al. 2015

Applied Physics Reviews

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“…Wang, G. et al has reported a PIN diode based α-particle detector. The use of an 8 µm intrinsic GaN layer between p-GaN and n-GaN increases the thickness of formed DW, which in turn helps to detect higher energy particles with improved sensitivities [31]. Figure 5 shows the diode schematic of the PIN α-particle detector used to detect 700 keV α-particles with a CCE of 80% and an energy resolution of 50%.…”

Section: Pin Diodesmentioning

confidence: 99%

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Sandupatla

Arulkumaran

et al. 2020

Micromachines

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Among the different semiconductors, GaN provides advantages over Si, SiC and GaAs in radiation hardness, resulting in researchers exploring the development of GaN-based radiation sensors to be used in particle physics, astronomic and nuclear science applications. Several reports have demonstrated the usefulness of GaN as an α-particle detector. Work in developing GaN-based radiation sensors are still evolving and GaN sensors have successfully detected α-particles, neutrons, ultraviolet rays, x-rays, electrons and γ-rays. This review elaborates on the design of a good radiation detector along with the state-of-the-art α-particle detectors using GaN. Successful improvement in the growth of GaN drift layers (DL) with 2 order of magnitude lower in charge carrier density (CCD) (7.6 × 1014/cm3) on low threading dislocation density (3.1 × 106/cm2) hydride vapor phase epitaxy (HVPE) grown free-standing GaN substrate, which helped ~3 orders of magnitude lower reverse leakage current (IR) with 3-times increase of reverse breakdown voltages. The highest reverse breakdown voltage of −2400 V was also realized from Schottky barrier diodes (SBDs) on a free-standing GaN substrate with 30 μm DL. The formation of thick depletion width (DW) with low CCD resulted in improving high-energy (5.48 MeV) α-particle detection with the charge collection efficiency (CCE) of 62% even at lower bias voltages (−20 V). The detectors also detected 5.48 MeV α-particle with CCE of 100% from SBDs with 30-μm DL at −750 V.

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“…The superior material characteristics of GaN have encouraged multiple research groups in exploring applications of GaN devices in radiation detection. GaN devices have performed exceedingly well as α-particle detectors [4,5,6,7,8,9,10,11,12,13] and neutron detectors [14,15,16,17]. The structure of these GaN detectors can be classified into three types, namely double Schottky contact (DSC) structure, mesa structure and sandwich structure.…”

Section: Introductionmentioning

confidence: 99%

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

Sandupatla

Arulkumaran

Ranjan³

et al. 2019

Sensors

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A low voltage (−20 V) operating high-energy (5.48 MeV) α-particle detector with a high charge collection efficiency (CCE) of approximately 65% was observed from the compensated (7.7 × 1014 /cm3) metalorganic vapor phase epitaxy (MOVPE) grown 15 µm thick drift layer gallium nitride (GaN) Schottky diodes on free-standing n+-GaN substrate. The observed CCE was 30% higher than the bulk GaN (400 µm)-based Schottky barrier diodes (SBD) at −20 V. This is the first report of α–particle detection at 5.48 MeV with a high CCE at −20 V operation. In addition, the detectors also exhibited a three-times smaller variation in CCE (0.12 %/V) with a change in bias conditions from −120 V to −20 V. The dramatic reduction in CCE variation with voltage and improved CCE was a result of the reduced charge carrier density (CCD) due to the compensation by Mg in the grown drift layer (DL), which resulted in the increased depletion width (DW) of the fabricated GaN SBDs. The SBDs also reached a CCE of approximately 96.7% at −300 V.

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GaN-based PIN alpha particle detectors

Cited by 27 publications

References 6 publications

Review of using gallium nitride for ionizing radiation detection

Review of using gallium nitride for ionizing radiation detection

Vertical GaN-on-GaN Schottky Diodes as α-Particle Radiation Sensors

Low Voltage High-Energy α-Particle Detectors by GaN-on-GaN Schottky Diodes with Record-High Charge Collection Efficiency

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