GaN-based SAW structures resonating within the 5.4&amp;#x2013;8.5 GHz frequency range, for high sensitivity temperature sensors

Müller, A.; Konstantinidis, G.; Giangu, Ioana; Buiculescu, Valentin; Dinescu, Adrian; Ştefănescu, Alin; Stavrinidis, A.; Stavrinidis, G.; Ziaei, A.

doi:10.1109/mwsym.2014.6848483

Cited by 11 publications

(3 citation statements)

References 8 publications

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“…Also, the sensitivity and the TCF obtained from simulation differs from the experiment and this is explained by the incomplete information regarding the variation of the material parameters with the temperature. The values of the sensitivity and TCF are comparable to those obtained by the authors for similar SAW structures on GaN/Si measured up to 150 • C [10], [11].…”

Section: High Temperature Measurement Proceduressupporting

confidence: 86%

“…Most of our previous investigations were focused on SAW sensors manufactured on GaN/Si and AlN/Si thin piezoelectric layers [3], [10]. Very high sensitivities and absolute TCF values (in the range of 62 ppm/ • C to 72 ppm/ • C) were extracted between 23 • C to 150 • C for one port SAW resonators on GaN/Si with a resonance frequency between 5.4 and 8.5 GHz [11] and up to 117 ppm/ • C for AlN/Si SAW structures [3]. Although GaN and AlN are wide bandgap semiconductor materials, the silicon substrate seriously limits high temperature performances of sensors manufactured on these materials.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

et al. 2022

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This paper proposes high sensitivity temperature sensors based on single port surface acoustic wave (SAW) devices with GHz resonance frequencies, developed on GaN/SiC and GaN/Sapphire, which permit wide range, accurate temperature determinations. In contrast with GaN/Si SAW based temperature sensors, SiC and Sapphire substrates enable the proper functionality of these devices up to 500 • C (773 K), as the high resistivity Si substrate becomes conductive at temperatures exceeding 250 • C (523 K) due to the relative low bandgap (and high intrinsic carrier concentrations). Low temperature measurements were carried out using a cryostat between -266 • C (7 K) and room temperature (RT) while the high temperature measurements are made on a modified RF probe station. A polynomial fit was used below RT and a linear approximation was evidenced between RT and 500 • C (773 K). The structures were simulated at different selected temperatures based on a method that couples Finite Element Method (FEM) and Coupling of Modes (COM). The measured temperature coefficient of frequency (TCF) is about 46 ppm/ • C for GaN/SiC SAWs and reaches values of 96 ppm/ • C for GaN/Sapphire SAW in the temperature range 25 -500 • C (298 K -773 K).INDEX TERMS Surface acoustic wave, temperature sensor, GaN, SiC, sapphire, high temperature measurements, low temperature measurements.

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Section: High Temperature Measurement Proceduressupporting

confidence: 86%

Section: Introductionmentioning

confidence: 99%

Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

et al. 2022

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“…However, these bulk materials operate at a frequency below 2 GHz and could limit the performance of SAW devices [6]. Nonetheless, recent studies have showed that GaN/Si-based SAW resonators achieved 5–8.5 GHz operating frequencies [7]. It is favorable, since GaN is a prominent semiconductor material and is widely accessible.…”

Section: Introductionmentioning

confidence: 99%

A Theoretical Study of Surface Mode Propagation with a Guiding Layer of GaN/Sapphire Hetero-Structure in Liquid Medium

et al. 2018

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Gallium Nitride (GaN) is considered as the second most popular semiconductor material in industry after silicon. This is due to its wide applications encompassing Light Emitting Diode (LED) and power electronics. In addition, its piezoelectric properties are fascinating to be explored as electromechanical material for the development of diverse microelectromechanical systems (MEMS) application. In this article, we conducted a theoretical study concerning surface mode propagation, especially Rayleigh and Sezawa mode in the layered GaN/sapphire structure with the presence of various guiding layers. It is demonstrated that the increase in thickness of guiding layer will decrease the phase velocities of surface mode depending on the material properties of the layer. In addition, the Q-factor value indicating the resonance properties of surface mode appeared to be affected with the presence of fluid domain, particularly in the Rayleigh mode. Meanwhile, the peak for Sezawa mode shows the highest Q factor and is not altered by the presence of fluid. Based on these theoretical results using the finite element method, it could contribute to the development of a GaN-based device to generate surface acoustic wave, especially in Sezawa mode which could be useful in acoustophoresis, lab on-chip and microfluidics applications.

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Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

Lv¹,

Shi²,

Ai³

et al. 2022

J. Semicond.

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Surface acoustic wave (SAW) resonator with outstanding quality factors of 4829/6775 at the resonant/anti-resonant frequencies has been demonstrated on C-doped semi-insulating bulk GaN. The impact of device parameters including aspect ratio of length to width of resonators, number of interdigital transducers, and acoustic propagation direction on resonator performance have been studied. For the first time, we demonstrate wireless temperature sensing from 21.6 to 120 °C with a stable temperature coefficient of frequency of –24.3 ppm/°C on bulk GaN-based SAW resonators.

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GaN-based SAW structures resonating within the 5.4–8.5 GHz frequency range, for high sensitivity temperature sensors

Cited by 11 publications

References 8 publications

Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

Investigation of Temperature Sensing Capabilities of GaN/SiC and GaN/Sapphire Surface Acoustic Wave Devices

A Theoretical Study of Surface Mode Propagation with a Guiding Layer of GaN/Sapphire Hetero-Structure in Liquid Medium

Bulk GaN-based SAW resonators with high quality factors for wireless temperature sensor

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