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The effects of the substrate temperature in the molecular beam epitaxy growth of In0.52Al0.48normalAs on false(001false)normalInP have been investigated. A strong dependence of the structural, electrical, and optical properties of normalInAlAs films on the growth temperature has been found and optimized material can be grown at 530°C. The low substrate temperatures deteriorate the material quality due to insufficient growth kinetics, while the higher temperatures allow the formation of composition inhomogeneities which also deteriorate the structural, optical, and electrical characteristics of In0.52Al0.48normalAs . Using In0.52Al0.48normalAs buffers grown at 530°C, state‐of‐the‐art InxGa1−xnormalAs/In0.52Al0.48normalAs high electron mobility transistors were fabricated and showed reduced output conductance and no kink effect in the I(V) characteristics.