GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg$_{\rm x}$N$_{\rm y}$–GaN Buffer Layer

Chang, Shoou‐Jinn; Lee, K.H.; Chang, Ping-Chuan; Wang, Y.C.; Yu, Chunyang; Kuo, Chien-Nan; Wu, San-Lein

doi:10.1109/jqe.2008.2000916

Cited by 38 publications

(16 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The NEP and the normalized D * are also vital parameters for the evaluation of PD performance. The total noise current power of the PD can also be estimated by integrating S n (f ) for a given bandwidth, B [27]- [29]. …”

Section: Resultsmentioning

confidence: 99%

Noise Properties of Mg-Doped ZnO Nanorods Visible-Blind Photosensors

Liu

Young

et al. 2015

IEEE J. Select. Topics Quantum Electron.

Self Cite

View full text Add to dashboard Cite

In this investigation, Mg-doped ZnO nanorods were synthesized successfully on a glass substrate at 80°C by hydrothermal method. The average length and diameter of the Mg-ZnO nanorods were 609 nm and approximately 50 nm, respectively. The X-ray diffraction spectrum showed the Mg-ZnO nanorods had a wurtzite hexagonal phase. The Mg-doped ZnO nanorods are found to be single crystals grown along the c-axis. The photosensors showed good stability properties in ultraviolet (UV) illumination. The resulting Mg-doped ZnO nanorods have excellent potential for application in a UV photodetector (PD) because of the Mg-doped ZnO nanorods UV PD has a high UV-to-visible ratio, fast rise/fall time. Furthermore, the dynamic response of the Mg-doped ZnO nanorods PD with Au electrodes was stable and reproducible with an on/off current contrast ratio of approximately 4 × 10 3 . The ultraviolet-to-visible rejection ratio of the sample is approximately 400 when biased at 1 V, and the fabricated UV PD is visible-blind with a sharp cutoff at 350 nm. The low-frequency noise spectra obtained from the UV PD were caused purely by the 1/f noise. The noise-equivalent power and normalized detectivity (D * ) of the Mg-ZnO nanorod PD were 0.335 × 10 −9 W and 1.49 × 10 8 cm · Hz 0.5 · W −1 , respectively.Index Terms-Mg-ZnO, hydrothermal method, noise.

show abstract

Section: Resultsmentioning

confidence: 99%

Noise Properties of Mg-Doped ZnO Nanorods Visible-Blind Photosensors

Liu

Young

et al. 2015

IEEE J. Select. Topics Quantum Electron.

Self Cite

View full text Add to dashboard Cite

show abstract

“…The solid lines shown in the figure were the experimental data, whereas the dashed lines were the 1/f fittings. It should be noted that the noise power density measured from the TiO 2 MIS PD was significantly smaller than that measured from the TiO 2 can be calculated by integrating the noise spectral density, i.e., S n (f ), over the frequency range [13], [14]. Thus…”

Section: Methodsmentioning

confidence: 99%

“…5, we found that total square noise current i n 2 was 3.39 × 10 −28 A 2 . The noise equivalent power (NEP) and the normalized detectivity D * can be determined by [13], [14] …”

Section: Methodsmentioning

confidence: 99%

A $\hbox{TiO}_{2}$ Nanowire MIS Photodetector With Polymer Insulator

Chang

Tsai

Jiao

et al. 2012

IEEE Electron Device Lett.

View full text Add to dashboard Cite

The authors report the growth of TiO 2 nanowires by heating the Ti/glass template and the fabrication of a TiO 2 nanowire metal-insulator-semiconductor (MIS) photodetector (PD). Compared with a TiO 2 nanowire metal-semiconductormetal PD, it was found that we could achieve a photocurrent 29 times larger. It was also found that the dynamic response of the TiO 2 nanowire MIS PD was stable and reproducible with an on/off current contrast ratio of around 180. With an incident light wavelength of 390 nm and an applied bias of 5 V, it was found that the measured responsivity of the PD was 2.46 × 10 −3 A/W. Furthermore, the noise equivalent power and the detectivity of the fabricated TiO 2 nanowire MIS PD were 7.49 × 10 −12 W and 8.86 × 10 11 cm · Hz 0.5 · W −1 , respectively.Index Terms-Metal-insulator-semiconductor (MIS), photodetector (PD), polymer, titanium dioxide (TiO 2 ) nanowires.

show abstract

“…These metal oxides can also be used as photodetectors. Indeed, ZnO based ultraviolet photodetectors prepared by sol-gel technique [1], radio frequency (rf) magnetron sputtering [2], e-beam evaporation [3], molecular beam epitaxy (MBE) [4], [5], and metalorganic chemical vapor deposition (MOCVD) [6] have all been demonstrated. Amorphous indium gallium zinc oxide (a-IGZO) is another metal oxide that has attracted much attention.…”

Section: Introductionmentioning

confidence: 99%

A Deep UV Sensitive ${\rm Ta}_{2}{\rm O}_{5}/{\rm a-IGZO}$ TFT

et al. 2011

Self Cite

View full text Add to dashboard Cite

The authors report the fabrication of a deep-ultraviolet (deep-UV) sensitive a-IGZO thin-film-transistor (TFT) with a Ta 2 O 5 gate dielectric. It was found that carrier mobility, threshold voltage and subthreshold swing were 48.5 cm 2 Vs, 1.25 V and 0.49 V/decade, respectively, when measured in dark. It was also found that measured current increased from 1 5 10 9 A to 5 56 10 5 A, as we illuminated the sample with = 250 nm UV light when V G was biased at 0 V. Furthermore, it was found that deep-UV-to-visible rejection ratio could reach 1 0 10 6 for the fabricated Ta 2 O 5 /a-IGZO TFT.Index Terms-a-IGZO, solar-blind ultraviolet (UV) photodetctor, Ta 2 O 5 , thin-film-transistor (TFT).

show abstract

GaN-Based Schottky Barrier Photodetectors With a 12-Pair Mg$_{\rm x}$N$_{\rm y}$–GaN Buffer Layer

Cited by 38 publications

References 22 publications

Noise Properties of Mg-Doped ZnO Nanorods Visible-Blind Photosensors

Noise Properties of Mg-Doped ZnO Nanorods Visible-Blind Photosensors

A $\hbox{TiO}_{2}$ Nanowire MIS Photodetector With Polymer Insulator

A Deep UV Sensitive ${\rm Ta}_{2}{\rm O}_{5}/{\rm a-IGZO}$ TFT

Contact Info

Product

Resources

About