GaN-based Single Stage Low Noise Amplifier for X-band Applications

Caglar, Gizem Tendurus; Aras, Yunus Erdem; Urfali, Emirhan; Yilmaz, Dogan; Özbay, Ekmel; Nazlibilek, Sedat

doi:10.1109/mms55062.2022.9825558

Cited by 3 publications

(1 citation statement)

References 9 publications

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“…On the other hand, 2‐stage LNA (LNA‐2) has an NF of 1.7 dB, a flat gain response of 16.8 dB, and input and output return losses of 8.8 and 10 dB, respectively. Furthermore, Caglar et al 12 have demonstrated a single‐stage LNA MMIC design that employs HEMTs with source degeneration in 0.15 μm GaN on SiC technology. This arrangement offers an enhanced noise figure (1.1 dB), gain (>6.9 dB), and fairly good input and output return losses (8.5 and 9.5 dB, respectively) for the frequency range of 8–11 GHz.…”

Section: Introductionmentioning

confidence: 99%

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Verma,

Nandi

2023

Int J Numerical Modelling

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In this work, a comprehensive investigation on the noise performance of novel optimized back‐barrier engineered GaN based trigate HEMT (BB‐trigate HEMT), have been carried out using Sentaurus TCAD tool. The microwave‐frequency noise of the device has been analyzed using a Green's function approach, assessing the gate and drain noise spectral densities under different bias conditions such as off‐state, subthreshold state and on‐state condition. More importantly, the G‐R noise component in BB‐trigate HEMT is almost eliminated in comparison to conventional trigate HEMT (C‐trigate HEMT). This is due to use of AlGaN back‐barrier layer (BBL). Subsequently, for the first time, it is reported that the noise parameters such as noise resistance and overall noise figure are drastically reduced to ~22 mΩ and ~0.02 dB respectively at 10 GHz frequency for back‐barrier (BB) trigate HEMT having a scaled gate length of 100 nm. The proposed device shows prominent noise performance than conventional trigate HEMT and thereby, it is highly suitable for designing low noise amplifier for X‐band applications.

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Section: Introductionmentioning

confidence: 99%

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Verma,

Nandi

2023

Int J Numerical Modelling

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Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications

Imran Nawaz,

Zafar,

Gurdal

et al. 2024

Circuit Theory & Apps

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SummaryCascode HEMTs exhibit high gain and broadband performance. Promising reverse transmission makes matching networks simpler and insensitive to impedance on either side of the HEMT. On the other hand, common source (CS) HEMTs with intentional small inductance at the source provide simultaneous match for optimum noise and input impedance. This paper provides a performance comparison of μm cascode HEMTs‐based low‐noise amplifier and μm CS HEMTs‐based low‐noise amplifiers with specific emphasis on robustness, including survivability and reverse recovery time (RRT). Cascode LNA survives an input power of 33 dBm while CS LNA handles 30 dBm power, each having a 1 k passive limiting resistor on the gate bias line. RRT of cascode LNA is also better. Better survivability and RRT for cascode LNA are attributed to its HEMT's stacked configuration. The designs of LNAs are described, along with their small‐signal, noise, and large‐signal characteristics in the X‐band. Cascode LNA has a better input match, while CS LNA has a better output match. Gains are comparable, while CS LNA has better P1dB at higher band edge frequency. The noise figure for both LNAs is less than 1.9 dB, with CS LNA having a slight edge over cascode. This study benefits RF designers in choosing appropriate HEMT topology as per application for designing robust low‐noise amplifiers.

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A highly survivable X‐band low noise amplifier based on GaN HEMT technology and impact of pulse width on recovery time

Nawaz,

Zafar,

Akoglu

et al. 2024

Micro & Optical Tech Letters

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GaN high electron mobility transistor (HEMT)‐based low noise amplifiers (LNAs) are an integral part of microwave receiver systems to enhance signal‐to‐noise ratio (SNR). The noise of LNA itself becomes critical for systems requiring high SNR, such as imaging and satellite communication systems. This paper discusses the design of a three‐stage LNA operating at the X‐band in the frequency range of 8.0–12.0 GHz. The amplifier's design and small signal, noise, and linearity characterizations are discussed. Stagewise analysis for gain, noise figure (NF), and matching network losses at the design stage results in achieving promising results. The proposed LNA provides a gain of 23.2 dB with dB gain ripple. Its NF is below 1.5 dB, output power at 1 dB gain compression is 16.4 dBm, and third‐order intercept point is 24.7 dBm at 10 GHz. LNA's survivability is validated to input stress as high as 42 dBm. This LNA is the best reported NF and survivability combination in the 8.0–12.0‐GHz frequency range. The reverse recovery time of LNA is measured under two different pulse conditions, and it has been shown that LNA has better recovery times for lower pulse width signals. This LNA finds its applications in radars and satellite communication systems.

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GaN-based Single Stage Low Noise Amplifier for X-band Applications

Cited by 3 publications

References 9 publications

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Noise performance of back‐barrier engineered GaN‐based trigate HEMT for X‐band applications

Robustness of GaN on SiC low‐noise amplifiers in common source and cascode configurations for X‐band applications

A highly survivable X‐band low noise amplifier based on GaN HEMT technology and impact of pulse width on recovery time

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