GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction

Liu, Jutong; Zhi, Dan; Redwing, Joan M.; Tischler, M. A.; Kuech, T. F.

doi:10.1016/s0022-0248(96)00588-x

Journal of Crystal Growth

1997

DOI: 10.1016/s0022-0248(96)00588-x

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GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction

Jutong Liu

Dan Zhi

Joan M. Redwing³

et al.

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GaN films studied by near-field scanning optical microscopy, atomic force microscopy and high resolution X-ray diffraction

Cited by 5 publications

References 11 publications

An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system

An overview of gallium nitride growth chemistry and its effect on reactor design: Application to a planetary radial-flow CVD system

Design of gas inlets for the growth of gallium nitride by metalorganic vapor phase epitaxy

Silicon effect on GaN surface morphology

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