GaN grown on (111) single crystal diamond substrate by molecular beam epitaxy

Diamond as the heat spreader for the thermal dissipation of GaN-based electronic devices

“…The thermal mismatch with different TECs also induces a high tensile strain in the epilayer during the cooling down of the sample after growth. There are a lot of efforts in the GaN deposited on different types of diamond substrates, such as single crystal diamond (SCD) with (110), (111) or (100) orientations, nano-crystalline diamond, polycrystalline diamond, or the highly misoriented diamond substrate [49][50][51][52][53][54][55][56][57][58][59][60][61][62][63]. The growth methods include metal organic chemical vapor deposition (MOCVD), molecular beam epitaxial (MBE), HVPE and resonance plasma enhanced MOCVD (ECR-MOCVD) [49][50][51][52][53][54][55][56][57][58][59].…”

“…The quality of the GaN was improved when the SCD (111) substrate was utilized. In 2009, Dussaigne et al reported the GaN grown on (111) SCD substrate by ammonia-source molecular beam epitaxy (NH 3 -MBE) using an AlN buffer layer [52]. The reflectance high energy electron diffraction (RHEED) pattern demonstrated the good quality and smooth surface.…”

Realising epitaxial growth of GaN on (001) diamond

“…Besides investigations on the adding of a diamond layer on existing GaN structures, 4,5 this research involves bonding of GaN on CVD diamond [6][7][8] and the application of siliconon-diamond substrates. 9,10 Recently, GaN has been deposited directly on several types of diamond substrate, [11][12][13][14][15] leading to the successful fabrication of an AlGaN/GaN HEMT on (111) single crystalline diamond by MBE. 16 Although this diamond (111) substrate offers a nice threefold symmetry as a template for the growth of hexagonal GaN, it is much more difficult to obtain and process in comparison to (001) diamond.…”

GaN nanowires on diamond

“…Common epitaxy techniques were applied, including CVD, [2,3,7,10,11] MBE [1,5,12,13] and magnetron sputtering [14]. However, the crystal quality of the deposited film is hampered by the very different thermal expansion coefficients and the lattice mismatch of both materials, which induce strain, defects and even macroscopic cracks at the interface [12]. As a consequence, device performance and efficiency can be significantly reduced.…”