GaN HEMT Driving Scheme of Totem-Pole Bridgeless PFC Converter

Li, Binxing; Zhang, Rongchi; Zhao, Nannan; Wang, Gaolin; Huo, Junya; Zhu, Liqian; Xu, Dianguo

doi:10.1109/peac.2018.8590677

Cited by 8 publications

(4 citation statements)

References 9 publications

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“…As can be observed, the tested device is affected by the kink effect in S 22 . As well-known, the GaN HEMT technology is prone to be affected by this phenomenon, owing to the relatively high transconductance [51][52][53][54]. In accordance with this, the observed kink effect in S 22 is more pronounced at lower T a , due to the higher g m .…”

Section: Sensitivity-based Analysis Of Small-signal Parameters and Rf...supporting

confidence: 69%

“…Ostermaier et al in 2009, proposed an ultrathin InAlN/AlN barrier HEMT that have high performance under normally off operation. They selectively etched the n++ GaN cap layer structure, which in-turn controls the width of the ultrathin barrier layer [54]. The proposed structure operates with a threshold voltage of 0.7 V, a maximum transconductance of 400 mS/mm and a maximum output current of 800 mA/mm.…”

Section: The Influence Of Different Substrates On Gan Hemt Devicementioning

confidence: 99%

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Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

2022

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Section: Sensitivity-based Analysis Of Small-signal Parameters and Rf...supporting

confidence: 69%

Section: The Influence Of Different Substrates On Gan Hemt Devicementioning

confidence: 99%

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

2022

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“…A totem-pole bridgeless power factor correction (PFC) converter based on GaN Systems GS66508B was proposed in [ 54 ]. The Silicon Laboratories Si8273 was used to drive the GaN HEMTs, and Kelvin source connection, voltage clamp, discharging resistor, and separate turn-on and turn-off paths were utilized.…”

Section: Review On Gan Hemt Driving Circuitsmentioning

confidence: 99%

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

2021

Micromachines

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Wide-bandgap (WBG) material-based switching devices such as gallium nitride (GaN) high electron mobility transistors (HEMTs) and silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are considered very promising candidates for replacing conventional silicon (Si) MOSFETs for various advanced power conversion applications, mainly because of their capabilities of higher switching frequencies with less switching and conduction losses. However, to make the most of their advantages, it is crucial to understand the intrinsic differences between WBG- and Si-based switching devices and investigate effective means to safely, efficiently, and reliably utilize the WBG devices. This paper aims to provide engineers in the power engineering field a comprehensive understanding of WBG switching devices’ driving requirements, especially for mid- to high-power applications. First, the characteristics and operating principles of WBG switching devices and their commercial products within specific voltage ranges are explored. Next, considerations regarding the design of driving circuits for WBG switching devices are addressed, and commercial drivers designed for WBG switching devices are explored. Lastly, a review on typical papers concerning driving technologies for WBG switching devices in mid- to high-power applications is presented.

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“…For switching frequency over 100 kHz, it is recommended to use separate turn-on and turn-off paths, Kelvin source connection, ferrite beads, and minimized turn-off resistance and inductance of the driving loop [10]. Various driving circuits for GaN HEMTs were explored in References [9][10][11][12][13][14][15][16][17][18]. Discussion and designs for GaN HEMT driving circuits were provided in References [19][20][21].…”

Section: Gan Hemt Backgroundmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

104

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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GaN HEMT Driving Scheme of Totem-Pole Bridgeless PFC Converter

Cited by 8 publications

References 9 publications

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Wide Bandgap Based Devices: Design, Fabrication and Applications, Volume II

Review on Driving Circuits for Wide-Bandgap Semiconductor Switching Devices for Mid- to High-Power Applications

Review of GaN HEMT Applications in Power Converters over 500 W

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