GaN HEMT MMIC Doherty Power Amplifier With High Gain and High PAE

Park, Yunsik; Lee, Juyeon; Jee, Seunghoon; Kim, Seokhyeon; Kim, Cheol Ho; Park, Bonghyuk; Kim, Bumman

doi:10.1109/lmwc.2015.2390536

Cited by 21 publications

(4 citation statements)

References 8 publications

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“…Plan A Plan B Many works on DPAs have been carried out recently for both miniature and high frequencies. MMICs in GaAs, GaN, and CMOS processing are proposed in the recent literatures [27][28][29][30][31], which also show good performances by using some compact matching techniques.…”

Section: R L I M I Amentioning

confidence: 99%

Asymmetric Doherty Power Amplifier with Input Phase/Power Adjustment and Envelope Tracking

Yang

et al. 2021

Electronics

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In this paper, the design and implementation of a Doherty power amplifier (DPA) are proposed using gallium nitride high electron mobility transistors (GaN HEMTs). Class-F and Class-C modes are combined to obtain an asymmetric DPA. The precise active load-pull controlling of fundamental and harmonic terminations of the DPA is simulated and analyzed, including the parasitics of the transistors. The measurements of the DPA with the phase difference, input power ratio adjustment, and envelope tracking of the auxiliary PA are discussed in detail in order to achieve a competitive performance. A greater than 63% drain efficiency is obtained within the 10-dB input power dynamic range at 2.1 GHz. The peak of the drain efficiency reaches 73%, with a corresponding output power of 46 dBm.

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Section: R L I M I Amentioning

confidence: 99%

Asymmetric Doherty Power Amplifier with Input Phase/Power Adjustment and Envelope Tracking

Yang

et al. 2021

Electronics

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“…For conventional two-way ADPAs for an OPBO of more than 6 dB, the power capacity of the transistor for the peaking amplifier is larger than that for the carrier amplifier but it is not always possible to find a transistor that has an appropriate output power capacity for the peaking amplifier [14,15]. ADPAs can also be realised with a three-way configuration with a one carrier amplifier and two peaking amplifiers in parallel [16][17][18].…”

Section: Introductionmentioning

confidence: 99%

GaN‐HEMT asymmetric three‐way Doherty power amplifier using GPD

Koo

Kang

Lee

et al. 2018

IET Microwaves, Antennas & Propagation

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A gallium‐nitride high electron mobility transistor (GaN‐HEMT) three‐way asymmetric Doherty power amplifier using an unequal three‐way Gysel power divider (GPD) is presented in this study. Considering the output power capacity of transistors, the peaking amplifier was designed to have an output power capacity that is 1.5 times larger than that of the carrier amplifier through the use of a parallel combination of two different power amplifiers. A peaking amplifier that is 1.5 times larger can provide a back‐off level of 7.5 dB for another peak efficiency. Two different power amplifiers in the peaking amplifier can work as a single power amplifier through an optimization of the input power division ratio (PDR). To split the input power for the carrier and the two peaking amplifiers, an unequal three‐way GPD with an optimized PDR was employed. The implemented Doherty power amplifier for the 2.14 GHz band exhibited a drain efficiency (DE) of 59.5% and an adjacent channel leakage ratio (ACLR) of 27.1 dBc at an average output power of 37.2 dBm (7.2 dB for the output power back‐off) for the 2.14 GHz downlink long‐term evolution signal, which has a peak‐to‐average power ratio of 6.5 dB and a signal bandwidth of 10 MHz.

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“…4 A switch load power supply is used to enhance the efficiency at the low-power region with 10 dB back off. 5 The concurrent dual-band power amplifiers are implemented with inter-modulation tuning and achieved frequency range of 1.9GHz-2.6GHz with PAE higher than 36.1% at output power of 34.3 dBm. 6 Asymmetric biased drain voltage allows to achieve extended bandwidth with efficiency greater than 50% at 6 dB, 8 dB, and 10 dB of back-off power levels.…”

Section: Introductionmentioning

confidence: 99%

“…On the basis of published techniques, three categories are classified to realize CP radiation, such as single-point-fed 3 , dual or multiple-point-fed 4 and sequential rotation technique 5 . In earlier published techniques, about~3% narrowband AR has been achieved by regular CP designed DRAs with the single feed scheme, but in recent years, many broadband AR in DRAs have been reported by researchers with single-point feeding technique.…”

Section: Introductionmentioning

confidence: 99%

A high efficiency on‐chip reconfigurable Doherty power amplifier for LTE communication cells

Kumar

Kanuajia

Dwari

et al. 2018

Micro & Optical Tech Letters

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In this paper, a high efficiency on‐chip reconfigurable Doherty power amplifier (DPA) with proposed topology is proposed for LTE or 4G communication cells. The proposed DPA consists of input driver topology, hybrid coupler, asymmetric amplifiers, and 1:1 balun filtered network. The proposed input driver circuit provides wide amplified signal operation within range of 2.3GHz to 6GHz with flat gain of 33 dB. The amplified signal is unsteadily divided into two paths toward the carrier and the power amplifier by 900 hybrid couplers and demonstrates 27.6 dB and 28.3 dB of gain along with 83.2% and 84.5% of power added efficiency at average output power of 40 dBm. The high efficiency and almost flatness in gain stability of proposed DPA providing better solution in order to overcome the interference and the broadband issues for LTE communication cells. The balun‐filtered network is employed for combined the two outputs of carrier and peak amplifiers that provides more uniform desired band of operation in the frequency responses. The proposed DPA circuit are implemented and optimized by using advanced design RF simulator platform. The fabricated chip is made by using 0.13 μm GaN HEMT on Si‐Nitride monolithic microwave integrated circuit die process. The fabricated chip of DPA provides 85% of PAE with 28 dB gain which are made close agreement with simulation results. The size of chip is 2.8*1.2mm2 which occupies less die area as compared to existing DPAs.

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GaN HEMT MMIC Doherty Power Amplifier With High Gain and High PAE

Cited by 21 publications

References 8 publications

Asymmetric Doherty Power Amplifier with Input Phase/Power Adjustment and Envelope Tracking

Asymmetric Doherty Power Amplifier with Input Phase/Power Adjustment and Envelope Tracking

GaN‐HEMT asymmetric three‐way Doherty power amplifier using GPD

A high efficiency on‐chip reconfigurable Doherty power amplifier for LTE communication cells

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