GaN-HEMT nonlinear modeling of single-ended and Doherty high-power amplifiers

Hajji, R.; Poulton, Matthew; Crittenden, Daria B.; Gengler, Jeff; Xia, Peter

doi:10.1109/eumc.2014.6986686

Cited by 3 publications

(3 citation statements)

References 2 publications

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“…Furthermore, excellent agreement between simulated and measured large signal RF performance metrics such as efficiency, output power and gain has been reported [3] [4] [5] [6]. However, as RF transistors scale up to high powers, these models have shown lower accuracy in predicting back-off power efficiency for Doherty HPA designs [7] [8]. Often the prediction accuracy of an initially extracted compact model is unacceptable and post-tuning of the model parameters based on load-pull measurement data is required to improve it.…”

Section: Introductionmentioning

confidence: 99%

“…To validate this generalized modeling framework, the large-signal one-tone simulation of a two-way Doherty HPA with packaged LDMOS power transistors will be investigated and compared against the measurements of the HPA and a simulation of the HPA using a compact transistor model over a discrete set of frequencies where a model was extracted from load-pull measurements. Unlike other attempts of Doherty HPA design via behavioral models, load-pull measurements and compact models [23] [24] [10] [8], our paper proposes a generalized framework that has a particular application of being able to produce a single time-invariant time-domain-defined behavioral model that can be used to approximate all the measured load-pull data at a set of discrete non-uniformly-spaced fundamental frequencies.…”

Section: Introductionmentioning

confidence: 99%

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A Time-Domain Multi-Tone Distortion Model for Effective Design of High Power Amplifiers

Amini

Boumaiza

2022

IEEE Access

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This paper proposes a new time-domain multi-tone distortion (TD-MTD) model suitable for accurately predicting the non-linear behavior of packaged high power radio frequency (RF) transistors over a range of discrete non-uniformly distributed frequencies. This proposed TD-MTD model uses a single expression rather than multiple distinct frequency specific behavioral models to describe the underlying behavior of the high power RF transistor at multiple fundamental frequencies. Furthermore its extraction is carried out using a time-domain representation of the travelling waves that can be acquired using a generic vector load-pull characterization system and without imposing additional requirements. The proposed model is extracted as an artificial neural network (ANN) and is implemented as a Netlist to serve in a harmonic balance simulator based power amplifier design process. The proposed model is validated in two phases. First, its ability to reproduce the large-signal behavior of a high power RF LDMOS transistor was demonstrated in simulation. Then, the TD-MTD model was used to validate the design of a high power two-way asymmetric Doherty power amplifier and the simulated output-power-dependent power efficiency, AM/AM, AM/PM and input return loss characteristics were compared to those obtained in measurement. The excellent agreement between the simulation and measurement results confirms the usefulness of the proposed model despite the simplicity of its extraction routine and measurement data.INDEX TERMS artificial neural network, behavioral model, computer-aided design, harmonic balance simulation, load-pull, measurement-based design, non-linear time-invariant model, poly-harmonic distortion model, power amplifier design, power transistor model, Volterra series

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

A Time-Domain Multi-Tone Distortion Model for Effective Design of High Power Amplifiers

Amini

Boumaiza

2022

IEEE Access

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“…[12,13]. There are also several models proposed for use with GaN HEMTs, each with its own focus on a narrow range of applications [14][15][16][17] . InP HEMTs have unique physical properties.…”

Section: Introductionmentioning

confidence: 99%

An improved large signal model of InP HEMTs

Li¹,

Li²,

Liu³

2018

J. Semicond.

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An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately.

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