An improved large signal model of InP HEMTs

Abstract

An improved large signal model for InP HEMTs is proposed in this paper. The channel current and charge model equations are constructed based on the Angelov model equations. Both the equations for channel current and gate charge models were all continuous and high order drivable, and the proposed gate charge model satisfied the charge conservation. For the strong leakage induced barrier reduction effect of InP HEMTs, the Angelov current model equations are improved. The channel current model could fit DC performance of devices. A 2 × 25 μm × 70 nm InP HEMT device is used to demonstrate the extraction and validation of the model, in which the model has predicted the DC I–V, C–V and bias related S parameters accurately.

Emerging Transistor Technologies Capable of Terahertz Amplification: A Way to Re-Engineer Terahertz Radar Sensors

“…Modeling of InP HEMTs, the fastest of all HEMTs, has not been extensively reported upon in literature, unlike, for example, GaN HEMTs used in high-power amplification [119,120]. Commercial simulators still use InP HEMT models that date back to the late 20th century, while the more recent models are based on extrapolation from modeling of GaAs or GaN HEMTs [121,122]. However, some attempts at non-linear large-signal modeling of InP HEMTs have recently been made [121], but it becomes increasingly difficult to separate device behavior from the electromagnetic environment [123].…”

“…Commercial simulators still use InP HEMT models that date back to the late 20th century, while the more recent models are based on extrapolation from modeling of GaAs or GaN HEMTs [121,122]. However, some attempts at non-linear large-signal modeling of InP HEMTs have recently been made [121], but it becomes increasingly difficult to separate device behavior from the electromagnetic environment [123]. Design in this technology is then typically performed using empirical models.…”

Physics-Based Analytical Channel Charge Model of In x Ga1-x As/In0.52Al0.48As Quantum-Well Field-Effect Transistors From Subthreshold to Strong Inversion Regimes

“…Recently, the Angelov model has been successfully extended to GaN HEMTs [21] and InxGa1-xAs/In0.52Al0.48As HEMTs [22]. The EE HEMT model, which was originally proposed for GaAs HEMTs as an extension of the Curtice model [23], is an empirical model developed by Agilent Technologies for the purpose of fitting the measured electrical characteristics of HEMTs with many fitting parameters [16,24]. However, most of the above models do not consider the materials' fundamentals and physics, limiting their usage from one technology generation to the next and from one temperature to another.…”