In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g m_max) = 2.8 mS μm−1 at V DS = 0.8 V and on-resistance (R ON) = 279 Ω μm. At I D = 0.56 mA μm−1 and V DS = 0.5 V, the same device displayed an excellent combination of f T = 703 GHz and f max = 820 GHz. To the best of the authors’ knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.

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We report In0.52Al0.48As/In0.7Ga0.3As/In0.52Al0.48As single-quantum-well metal-insulator-semiconductor field-effect transistors (MISFETs) with a selective source/drain regrowth process. Long-channel InGaAs MISFETs yielded a subthreshold swing (S) of 61 mV/decade at VDS = 0.05 V and room temperature, and displayed very little frequency dispersion behavior in capacitance–voltage (CV) characteristics in both the strong-inversion and weak-inversion regimes. Both the S and CV results reflect the excellent interface quality between a molecular beam epitaxy-grown InAlAs insulator and an InGaAs channel. The devices showed as little as 0.8% per decade of frequency dispersion at the maximum gate capacitance in the strong-inversion regime. Moreover, the fabricated devices yielded an effective mobility (μ n_eff) of 11 900 cm2 V−1 · s−1 at room temperature, and degradation of μ n_eff with V GS in the strong-inversion regime was negligible. These results are a consequence of the small interfacial state density and the smooth surface morphology at the interface.

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