&lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;${L}_{{g}} = {87}$ &lt;/tex-math&gt; 
                  &lt;/inline-formula&gt;nm InAlAs/InGaAs High-Electron- Mobility Transistors With a &lt;italic&gt;g&lt;/italic&gt; <sub>m_max</sub> of 3 S/mm and &lt;inline-formula&gt; 
                     &lt;tex-math notation="LaTeX"&gt;$f_{{T}}$ &lt;/tex-math&gt; 
                  &lt;/inline-formula&gt; of 559 GHz

Jo, Hyeon-Bhin; Baek, Ji-Min; Yun, Do-Young; Son, Seungwoo; Lee, Jung‐Hee; Kim, Tae Woo; Kim, Dae-Hyun; Tsutsumi, Takuya; Sugiyama, Hiroki; Matsuzaki, Hiroyuki

doi:10.1109/led.2018.2871221

Cited by 29 publications

(10 citation statements)

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“…As a result, it is imperative to boost both f T and f max in a harmonious way, since this enables a wide variation of applications such as low-noise-amplifiers (LNAs) and various THz integrated circuits using a single device technology. [9][10][11][12][13][14][15][16] In our previous report, 17) we demonstrated a significant potential of using an indium-rich channel design with Hall mobility close to 13 000 cm 2 V −1 s −1 , which resulted in outstanding DC and high-frequency characteristics with L g = 87 nm InGaAs HEMTs. In this paper, we demonstrate aggressively scaled down InGaAs/InAlAs HEMTs on a 3 inch InP substrate with both f T and f max in excess of 700 GHz at the same bias condition.…”

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confidence: 90%

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L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz

Yun

Baek

et al. 2019

Appl. Phys. Express

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In this paper, we report an L g = 25 nm InGaAs/InAlAs HEMT on InP substrate that delivers excellent high-frequency characteristics. The device exhibited a value of maximum transconductance (g m_max) = 2.8 mS μm−1 at V DS = 0.8 V and on-resistance (R ON) = 279 Ω μm. At I D = 0.56 mA μm−1 and V DS = 0.5 V, the same device displayed an excellent combination of f T = 703 GHz and f max = 820 GHz. To the best of the authors’ knowledge, this is the first demonstration of a transistor with both f T and f max over 700 GHz on any material system.

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confidence: 90%

“…The device fabrication was nearly the same as in previous report from our group. 17) This is a two-step recess process with a gate-to-channel distance, t ins , of approximately 5 nm. Source-to-drain spacing (L SD ) was scaled down to 0.8 μm, and a non-alloyed metal stack of Ti/Mo/Ti/Pt/Au (5/10/10/ 10/200 nm) was used to form S/D ohmic contact.…”

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confidence: 99%

L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz

Yun

Baek

et al. 2019

Appl. Phys. Express

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“…InAlAs/InGaAs heterostructures have been widely studied in various aspects because of their vast potentials in both ultrahigh-speed electronic devices and highly-efficient optoelectronic devices that can operate in the infrared regimes. For instance, the high electron-mobility transistors [1][2][3][4] and the spin field-effect transistors [5] are feasible electronic devices that could be demonstrated on InAlAs/InGaAs heterostructures. In addition, the infrared photodetectors [6][7][8][9], X-ray detectors [10], terahertz (THz) quantumcascade lasers [11,12], mid-infrared quantum-cascade lasers [13,14], and electro-optical modulators [15] are also typical examples that can open up a broad avenue toward the tangible optoelectronic applications of the InAlAs/InGaAs quantum well (QW) structures.…”

Section: Introductionmentioning

confidence: 99%

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

2021

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The peculiar correlationship between the optical localization-state and the electrical deep-level defect-state was observed in the In0.52Al0.48As/In0.53Ga0.47As quantum well structure that comprises two quantum-confined electron-states and two hole-subbands. The sample clearly exhibited the Fermi edge singularity (FES) peak in its photoluminescence spectrum at 10–300 K; and the FES peak was analyzed in terms of the phenomenological line shape model with key physical parameters such as the Fermi energy, the hole localization energy, and the band-to-band transition amplitude. Through the comprehensive studies on both the theoretical calculation and the experimental evaluation of the energy band profile, we found out that the localized state, which is separated above by ~0.07 eV from the first excited hole-subband, corresponds to the deep-level state, residing at the position of ~0.75 eV far below the conduction band (i.e., near the valence band edge).

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“…parasitics plays a key role [3]- [5], as does the improvement of transport properties in the 2-D electron gas. InAs insets in indium-rich GaInAs channels evolved toward larger conduction band offsets and better carrier confinement [6].…”

Section: Introductionmentioning

confidence: 99%

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Ruiz

Saranovac

Han

et al. 2019

IEEE Trans. Electron Devices

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GaInAs/InAs composite channels in InP-based pHEMTs enable wideband and/or low-noise performances because of their superior carrier transport properties. To date, the influence of the InAs inset design details on transistor performance has not been parametrized in the literature. We present a systematic study of the effects of the InAs channel inset thickness on transistor characteristics and cutoff frequencies versus temperature, and on the noise performance at 300 K. The epitaxial layer structures considered here incorporate 2 to 5-nm InAs insets in a fixed total composite channel thickness. All layers exhibit excellent electron mobilities (from 40 200 to 54 800 cm 2 /Vs at 77 K). Thicker InAs insets improve both the current gain cutoff frequency (f T) and the maximum oscillation frequency (f MAX). However, they also result in higher gate leakage currents and increased channel impact ionization. 50-nm gate length pHEMTs with a 5-nm InAs inset feature the highest simultaneous f T /f MAX ≥ 390/675 (455/800) GHz at 300 (15) K for a low-noise bias but exhibit the poorest minimum noise figure NF MIN. Whereas higher f T (and/or f MAX) values have traditionally been associated with improved noise performances, this is no longer the case.

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<inline-formula> <tex-math notation="LaTeX">${L}_{{g}} = {87}$ </tex-math> </inline-formula>nm InAlAs/InGaAs High-Electron- Mobility Transistors With a <italic>g</italic> _{m_max} of 3 S/mm and <inline-formula> <tex-math notation="LaTeX">$f_{{T}}$ </tex-math> </inline-formula> of 559 GHz

Cited by 29 publications

References 9 publications

L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz

L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

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<inline-formula> <tex-math notation="LaTeX">${L}_{{g}} = {87}$ </tex-math> </inline-formula>nm InAlAs/InGaAs High-Electron- Mobility Transistors With a <italic>g</italic> m_max of 3 S/mm and <inline-formula> <tex-math notation="LaTeX">$f_{{T}}$ </tex-math> </inline-formula> of 559 GHz

Cited by 29 publications

References 9 publications

Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz

Lg = 25 nm InGaAs/InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz

Correlation between Optical Localization-State and Electrical Deep-Level State in In0.52Al0.48As/In0.53Ga0.47As Quantum Well Structure

InAs Channel Inset Effects on the DC, RF, and Noise Properties of InP pHEMTs

Contact Info

Product

Resources

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<inline-formula> <tex-math notation="LaTeX">${L}_{{g}} = {87}$ </tex-math> </inline-formula>nm InAlAs/InGaAs High-Electron- Mobility Transistors With a <italic>g</italic> _{m_max} of 3 S/mm and <inline-formula> <tex-math notation="LaTeX">$f_{{T}}$ </tex-math> </inline-formula> of 559 GHz

L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz

L_g = 25 nm InGaAs/InAlAs high-electron mobility transistors with both f_T and f_max in excess of 700 GHz