Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer

Reddy, V. Rajagopal; Prasad, C. V. R. K.; Janardhanam, V.; Choi, Chel‐Jong

doi:10.1007/s10854-021-05532-2

Cited by 11 publications

(2 citation statements)

References 52 publications

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“…Also, a similar situation was previously reported by Fatih et al The increase in Rs caused the ideality factor (n) to increase and calculated n values differed significantly from the n value for an ideal diode (i.e., n = 1). The reason for this can be the undesired oxidation on the surface of the layers, the series resistances between the junctions, the impurities, and the inhomogeneous distribution of the charges in the layers [59,64]. Besides that, the I 0 value of the Ag/ZnO:1%Cu/coronene/Ag diode was higher than that of the Ag/ZnO:3%Cu/coronene/Ag diode.…”

Section: Resultsmentioning

confidence: 99%

“…In general, a diode has a non-saturation current state under reverse bias, and so the gradients of both diodes under the reverse bias were quite large. The reasons for the non-saturation current state under reverse bias for both diodes could be elucidated from the interface state that occurred between the active layer of coronene and Ag, in that uncontrolled contamination and the barrier height reduce image load forces [57][58][59]. Figures 9(e) and (f) demonstrate the variation of rectification ratio (r = I f /I r ) is a vital diode parameter of the Ag/ZnO:1%Cu/ coronene/Ag and Ag/ZnO:3%Cu/coronene/Ag diodes as a function of voltage.…”

Section: Resultsmentioning

confidence: 99%

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Fabrication and morphological, optical, and electrical characterisation of Cu-doped ZnO nanorod/coronene nanowire hybrid heterojunctions

Aktas

ÜNAL²,

Kurt³

et al. 2022

Phys. Scr.

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The electrochemical deposition technique was employed to grow 1% and 3% Cu-doped ZnO nanorods on glass/ITO substrate. Then, coronene nanowire was deposited on the 1% and 3% Cu-doped ZnO surfaces via the thermal evaporation technique as an interfacial layer of hybrid heterojunctions. Structural analyses of different ratios of the Cu-doped ZnO layers revealed that they contain ZnO, CuZn, Cu2O and Cu16O14.15 phases, and further that a monoclinic coronene crystal structure could be detected from the XRD spectrum of ITO/coronene thin film. The elemental composition of the1% and 3% Cu-doped ZnO layers was investigated via SEM-EDX from which it was observed that the proportions of the elemental weight of Zn, O, and Cu were 73.4%, 23.5% and 3.1%, respectively, for 1% Cu- doped ZnO, and 71.2%, 21.1%, 7.7% for 3%Cu-doped ZnO. The surface morphological analyses revealed that the inorganic layer crystallised as hexagonal pillar nanorods and the organic layer as nanowires. It was also observed that the nanorod thickness increased from 130-230 nm to 270-450 nm with increasing Cu ratio. As a result of the optical analyses of the hybrid heterojunctions, it was found that the maximum absorption region of the heterojunctions was in the near-ultraviolet region and that they had very low transmittances (0.6-0.77%). In addition, the absorption coefficients and the band gap energy were ≈ 107 (m-1) and were 3.09 - 3.25eV, respectively, while the band gap energy of coronene thin film on ITO was 2.90 eV. Electrical analyses of Ag/ZnO:1%Cu/coronene/Ag and Ag/ZnO:3%Cu/coronene/Ag heterojunctions were performed in the ±0.4 V potential range in a dark environment at room temperature, and diode parameters were determined using various methods. It was found that Ag/ZnO:1%Cu/coronene/Ag and Ag/ZnO:3%Cu/coronene/Ag diodes had high rectification ratios with the values of 250 and 1140, respectively. It is also obvious that while the increase in Cu doping ratio increased the diode ideality factor, series resistances and barrier heights ranged from 1.31 to 13.7, 17 to 3283 Ω, and 0.43 to 0.55 eV, respectively, it decreased the reverse saturation current from 8.1x10-3 A to 8.2x10-5 A.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Fabrication and morphological, optical, and electrical characterisation of Cu-doped ZnO nanorod/coronene nanowire hybrid heterojunctions

Aktas

ÜNAL²,

Kurt³

et al. 2022

Phys. Scr.

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The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface

Özerden

Özden

Kariper

et al. 2022

J Mater Sci: Mater Electron

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The study of the dependence of dielectric properties, electric modulus, and ac conductivity on the frequency and voltage in the Au/(CdTe:PVA)/n-Si (MPS) structures

Güçlü,

Altındal,

Ulusoy

et al. 2024

J Mater Sci: Mater Electron

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The dielectric properties, electric modulus, loss tangent (tanδ), and ac conductivity of the fabricated Au/(CdTe:PVA)/n-Si (MPS) structures were investigated in wide-range frequency. By using the capacitance/conductance–voltage–frequency (C/G-V-f) measurements, the real/imaginary components of complex dielectric constant (εʹ, εʺ)/electrical modulus ($$M{\prime}$$ M ′ , $$M{\prime}{\prime}$$ M ′ ′ ), loss tangent (tanδ), and σac were calculated in wide-range frequency (2 kHz–0.7 MHZ) and voltage (± 2.5 V), and all results show that these parameters are a strong function of voltage and frequency. The observed decreases of εʹ and εʺ with increasing frequency were attributed to the existence of Nss, interlayer, and dipole polarizations. The value of εʹ was calculated as 128.38 (at 2 kHz and 2.5 V), which is quite higher than the maximum value of traditional SiO2. ln(σac)–ln(f) plot for 0.7 V shows three linear parts, indicating three different conduction mechanisms at low, intermediate, and high frequencies. These results show that the fabricated MPS structures can be successfully used instead of traditional metal–insulator–semiconductor as ultra-capacitors, which can use more electronic charges or energy.

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Electrical and carrier transport properties of Ti/α-amylase/p-InP MPS junction with a α-amylase polymer interlayer

Cited by 11 publications

References 52 publications

Fabrication and morphological, optical, and electrical characterisation of Cu-doped ZnO nanorod/coronene nanowire hybrid heterojunctions

Fabrication and morphological, optical, and electrical characterisation of Cu-doped ZnO nanorod/coronene nanowire hybrid heterojunctions

The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface

The study of the dependence of dielectric properties, electric modulus, and ac conductivity on the frequency and voltage in the Au/(CdTe:PVA)/n-Si (MPS) structures

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