The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface

Özerden, Enise; Özden, Pınar; Kariper, İ. Afşin; Pakma, Osman

doi:10.1007/s10854-022-08897-0

Cited by 6 publications

(2 citation statements)

References 35 publications

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“…The key benefits of organic dyes include their easy processing, tunable electrical properties, compatibility with flexible substrates, great optical and thermal stability, low cost, and ease of manufacture for large-area applications. Many optoelectronic devices, including Schottky diodes, photodiodes, organic light-emitting diodes, and solar cells, have been made using organic dyes as semiconductors [9][10][11][12][13][14][15].…”

Section: Introduction (Gi̇ri̇ş)mentioning

confidence: 99%

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

Taşcı

2023

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji

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In this study, it was aimed to produce an organic interface layered Schottky diode structure and frequency effect on capacitance-conductance-voltage measurements. In this context, phosphor doped n-type Si single crystal has been used as a semiconductor substrate with a 1-20 Ω.cm resistivity, (100) surface oriention, 2 inches in diameter and 350 μm thickness. The (E)-5,5-difluoro-1,3,7,9-tetramethyl-10-phenyl-2-(2-(pyridin-2-yl)vinyl)-5H-54,64-dipyrrolo [1,2-c:2',1'-f] [1,3,2] diazaborinine (BODIPY-Pyridine) thin film was coated on n-Si using the spin coating technique. Ohmic and rectifier contacts were coated by evaporation of indium (In) and gold (Au) using a thermal evaporation system and Au/ BODIPY-Pyridine/n-Si/In Schottky diode was fabricated. Capacitance-voltage (C-V) and conductance-voltage (G-V) measurements of this structure were gained at different frequencies in the dark. Contingent on the frequency, the series resistance (Rs) and the interface state density (Nss) values were identified by using the conductance and Hill-Coleman method, respectively.

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Section: Introduction (Gi̇ri̇ş)mentioning

confidence: 99%

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

Taşcı

2023

Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım Ve Teknoloji

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“…As a result, the properties of organic materials, which are easy and low-cost production steps, can be used in electronic and optoelectronic fields, making it possible to produce heterojunction layer photosensitive devices. 8,[12][13][14][15][16][17] These organic layered heterojunction structures can be used instead of many inorganic-based materials in various optoelectronic applications such as photodiodes and solar cells. [18][19][20][21] Triphenylamine (TPA) derivatives as a hole transfer materials have become an exciting area in the last decades for their use in the fabrication of electroluminescent devices in different areas.…”

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confidence: 99%

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

Çavdar

Izmirli

Koralay

et al. 2023

ECS J. Solid State Sci. Technol.

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Organic semiconductors provide many advantages in diode fabrication due to their variable electrical properties, flexibility and easy and cheap production processes. In this study, triphenylamine (TPA) organic compound was used for the Al/p-Si/TPA/Al Schottky structure. The effect of the triphenylamine on the electrical properties of the produced diode was studied by current-voltage measurements in dark and under various illumination intensities. The main electrical parameters such as barrier height (ΦB), ideality factor (n), series resistance (R s), and interface state density (N ss) were obtained from the I-V characteristics. The n, Φ B and R s values of the diode were found as 1.88, 0.80 eV and 2195 Ω for dark, and 3.96, 0.71 eV and 17 Ω for 100 mW cm−2 illumination intensity. Besides, the fabricated device exhibited photodiode behavior as obtained from the photocurrent measurement for the diode, depending on the illumination intensity. Additionally, it was found that the Al/p-Si/TPA/Al diode had a higher photocurrent (I ph ) in illuminated conditions than in dark conditions. The main photovoltaic parameters such as open circuit voltage (V oc ) and short circuit current (I sc ) were also investigated. Photo-responsivity and response time (τ r, τ d) of the diode was obtained as 0,015 A W−1 and 800 ms respectively. All these results show that the Al/p-Si/TPA/Al diode has potential in optoelectronic device applications.

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The electrical characterization of V2O5/p-Si prepared by spray pyrolysis technique using perfume atomizer

Eratilla,

Ruzgar

2024

Indian J Phys

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The electrical characterization of metal–insulator–semiconductor device with β-naphthol orange interface

Cited by 6 publications

References 35 publications

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

A Wide Frequency Range C-V and G-V Characteristics Study in Schottky Contacts with a BODIPY-Pyridine Organic Interface

Optoelectronic Properties of Triphenylamine Organic Thin Film Layered Al/p-Si /TPA/Al Heterojunction for Photodiode Application

The electrical characterization of V2O5/p-Si prepared by spray pyrolysis technique using perfume atomizer

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