GaN layer growth by HVPE on m‐plane sapphire substrates

Usikov, A.; Shapovalov, Lisa; Ivantsov, V.; Kovalenkov, O. V.; Syrkin, A. L.; Spiberg, P.; Brown, Rfc

doi:10.1002/pssc.200880889

Cited by 9 publications

(10 citation statements)

References 6 publications

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“…The quality of GaN(1122) layers could be improved after deposition of thin Al x Ga 1-x N intermediate layers between the m-plane sapphire and GaN layer. By optimization of the m-plane sapphire substrate treatment and the layer thickness, composition and growth temperature of the intermediate Al x Ga 1-x N layer, smooth mirror-like GaN layers were achieved [35].…”

Section: Resultsmentioning

confidence: 99%

“…The GaN growth rate was 0.4-1 mm/min. The growth procedure included conditioning of the sapphire substrate followed by deposition of an up to 1.2 mm thick Al x Ga 1-x N intermediate layer and a thick GaN layer [35,36]. Nominally undoped GaN layers had a n-type conductivity with a net background donor concentration (N D -N A ) of (2-5) Â 10 18 cm À3 as evaluated by capacitance-voltage measurements.…”

Section: Introductionmentioning

confidence: 99%

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Semi‐polar nitride surfaces and heterostructures

Strittmatter

Northrup

Johnson

et al. 2010

Physica Status Solidi (b)

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This paper reviews semi-polar GaN surfaces, of interest for light emitting devices, from both theoretical and experimental perspectives. Theoretical results on polarization charges at InGaN/GaN heterointerfaces and In incorporation into InGaN films are presented for polar (0001), semi-polar (1122) and nonpolar (1100) surfaces. Specific features of semi-polar InGaN/ GaN structures are emphasized which can be beneficial for improving optical and transport properties of quantum-wellbased light emitting devices. The analysis favours semi-polar surfaces such as the (1122) surface as growth plane for longwavelength light emitters. Therefore, the experimental sections emphasize progress towards long-wavelength LEDs and lasers by growth of InGaN/AlGaN/GaN(1122) heterostructures on large-area GaN(1122)/m-sapphire templates. The current status of such templates as grown by hydride vapour phase epitaxy is presented. The implementation of an epitaxial lateral overgrowth method on such templates to improve device performances is demonstrated.

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Semi‐polar nitride surfaces and heterostructures

Strittmatter

Northrup

Johnson

et al. 2010

Physica Status Solidi (b)

Self Cite

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“…Typical dislocation density was of the order of mid-10 8 cm À 2 and stacking fault density was below 10 5 cm À 1 [8].…”

Section: Methodsmentioning

confidence: 99%

“…As has been demonstrated for c-plane GaN, an alternative route to fabricate low-dislocation density GaN buffer layers is to deploy the epitaxial lateral overgrowth (ELOG) technique, whereby dislocation reduction is achieved by laterally growing over a masked area from a seed region [6]. A few reports have been published about ELOG on GaN(1 1 .2) surfaces [7,8]. While suitable stripe orientations and defect reduction mechanisms have been addressed, little has been reported about coalescence mechanisms and surface quality after coalescence.…”

Section: Introductionmentioning

confidence: 99%

Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers

Strittmatter

Teepe

Knollenberg

et al. 2011

Journal of Crystal Growth

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“…Article on 2-inch-diameter sapphire substrates [10]. The surface of these templates exhibited rms roughness of about 12 nm.…”

Section: Contributedmentioning

confidence: 99%

Optically‐pumped lasing of semi‐polar InGaN/GaN(1122) heterostructures

Strittmatter

Teepe

Yang

et al. 2010

Phys. Status Solidi (c)

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Results for long‐wavelength emitters are presented for semi‐polar InGaN/AlGaN/GaN heterostructures grown on GaN(11‐22)/m‐sapphire templates by metalorganic chemical vapor deposition. The semi‐polar GaN layers were 10 to 25 μm thick and grown by HVPE on sapphire substrates. X‐ray diffraction measurements indicate high crystallographic quality that approaches that of GaN(0001) layers on sapphire. Growth studies on the semi‐polar GaN templates established the high efficiency of indium incorporation into InGaN layers, with a wide growth‐temperature window up to 800°C for green light emitting structures. Basic LEDs were fabricated with peak emission up to 527 nm wavelength. Further growth studies established conditions for growing reasonably smooth, undoped InGaN/GaN laser heterostructures suitable for optical pumping. Optically‐pumped lasing was achieved at wavelengths from 400 nm up to 500 nm. The results demonstrate the viability of semi‐polar GaN(11‐22) on sapphire templates for long‐wavelength nitride laser diodes (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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GaN layer growth by HVPE on m‐plane sapphire substrates

Cited by 9 publications

References 6 publications

Semi‐polar nitride surfaces and heterostructures

Semi‐polar nitride surfaces and heterostructures

Coalescence during epitaxial lateral overgrowth of (Al,Ga)N(11.2) layers

Optically‐pumped lasing of semi‐polar InGaN/GaN(1122) heterostructures

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