GaN Membrane Supported SAW Pressure Sensors With Embedded Temperature Sensing Capability

Müller, A.; Konstantinidis, George; Giangu, Ioana; Adam, Gina C.; Ştefănescu, Alin; Stavrinidis, A.; Stavrinidis, G.; Kostopoulos, A.; Boldeiu, G.; Dinescu, Adrian

doi:10.1109/jsen.2017.2757770

Cited by 38 publications

(15 citation statements)

References 40 publications

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“…Even with a micro or nanocrystalline structure, GaN growth by sputtering is of great interest in applications that consider the piezoelectric character of the material. This characteristic makes it interesting for application in surface acoustic waves (SAW) filters and sensors, and other high frequency devices [22][23][24] . In this scenario, there is still a significant demand for practical studies in order to optimize and understand the role of the main deposition parameters on the physical properties of GaN films grown by sputtering using different deposition setups 25 .…”

Section: Introductionmentioning

confidence: 99%

Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit

et al. 2022

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This work reports the properties of GaN films grown onto c-Si (100) at relatively low substrate temperature (400°C) by reactive magnetron sputtering. The study depicts the effect of working pressure and RF power on the GaN film structural, vibrational and optical properties characterized by X-ray diffraction, atomic force and scanning electron microscopies, Raman spectroscopy and spectroscopic ellipsometry. Unusual low pressure deposition condition (0.40 Pa) was achieved by using a separated argon inlet directed to the Ga target surface, resulting in improved crystalline quality of the films. In this condition, the preferential crystalline orientation, the surface morphology and the optical gap of the GaN films show a strong dependence on the RF power applied to the Ga target, where low RF power (30-60 W) was responsible for increasing the c-axis orientation and the optical gap, while higher RF power (75-90 W) decreased the overall crystal quality and increased the surface roughness.

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Section: Introductionmentioning

confidence: 99%

Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit

et al. 2022

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“…Several wireless SAW-Pirani sensors are presented in the literature, such as [3][4][5]. In [6], a GaN membrane SAW sensor that measures simultaneously the pressure and the temperature with the same SAW structure operating as a dual sensor is demonstrated. Sensitivities higher than 60 MHz/MPa for the Lamb mode and about 20 MHz/MPa for the Rayleigh mode were obtained for the structure having fingers and pitches which were 170 nm wide.…”

Section: Introductionmentioning

confidence: 99%

Characterization of a Wireless Vacuum Sensor Prototype Based on the SAW-Pirani Principle

et al. 2020

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A prototype of a wireless vacuum microsensor combining the Pirani principle and surface acoustic waves (SAW) with extended range and sensitivity was designed, modelled, manufactured and characterised under different conditions. The main components of the prototype are a sensing SAW chip, a heating coil and an interrogation antenna. All the components were assembled on a 15 mm × 11 mm × 3 mm printed circuit board (PCB). The behaviour of the PCB was characterised under ambient conditions and in vacuum. The quality of the SAW interrogation signal, the frequency shift and the received current of the coil were measured for different configurations. Pressures between 0.9 and 100,000 Pa were detected with sensitivities between 2.8 GHz/Pa at 0.9 Pa and 1 Hz/Pa close to atmospheric pressure. This experiment allowed us to determine the optimal operating conditions of the sensor and the integration conditions inside a vacuum chamber in addition to obtaining a pressure-dependent signal.

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“…Recently, GaN/Si SAW devices operating at frequencies above 5 GHz were used as temperature and pressure sensors [10,11,12,13].…”

Section: Introductionmentioning

confidence: 99%

Room and Cryogenic Temperature Behaviour of Magnetic Sensors Based on Gan/Si Single Saw Resonators

Nicoloiu

Ciubotaru

Nastase

et al. 2019

2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems &Amp; Eurosensors XXXIII (TRANSDUCERS &Am

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This work analyzes resonance frequency shift vs. the applied magnetic field strength for GHz operating GaN/Si SAW single resonators. Magnetostrictive elements (Ni and CoFeB) were deposited in the proximity of the interdigitated transducers (IDTs) of the resonators (A-type structures) and also over the IDTs, after covering them with a BCB layer to avoid short circuits with IDTs metal (B-type structures). This work targets emerging applications of SAW resonators in driving spin wave pumping and in coupling of surface acoustic waves (SAW) with superconducting Q-bits. Magnetic sensitivity of the SAWs was analyzed at room temperature (RT) and at cryogenic temperatures, obtaining high magnetic sensitivities at 16 K. According to our knowledge, GaN based SAWs are first time used in magnetic applications; also, cryogenic behavior of magnetic SAW sensors is first time analyzed.

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GaN Membrane Supported SAW Pressure Sensors With Embedded Temperature Sensing Capability

Cited by 38 publications

References 40 publications

Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit

Structural, Morphological, Vibrational and Optical Properties of GaN Films Grown by Reactive Sputtering: The Effect of RF Power at Low Working Pressure Limit

Characterization of a Wireless Vacuum Sensor Prototype Based on the SAW-Pirani Principle

Room and Cryogenic Temperature Behaviour of Magnetic Sensors Based on Gan/Si Single Saw Resonators

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