GaN Metal-Semiconductor-Metal Visible-Blind Photodetectors with Transparent Indium-Tin-Oxide Contact Electrodes

Electrical properties and interfacial reactions of rapidly annealed Ni/Ru Schottky rectifiers on n-type GaN

“…Recently, rapid progress has been found in the fabrication of GaN-based optoelectronic and microelectronic devices such as GaN-based light-emitting diodes [LEDs] [1], laser diodes [LDs] [2], Solar-blind MSM-photodetectors [3], metal-semiconductor field effect transistor [MESFETs] [4], modulation-doped field effect transistor [MODFETs] [5], heterostructure field effect transistors [HFETs] [6] and high electron mobility transistors [HEMTs] [7,8]. Especially, the performance and reliability of these devices have been improved with high quality ohmic and Schottky rectifiers.…”

Annealing effects on structural and electrical properties of Ru/Au on n-GaN Schottky contacts

“…GaN-based devices have been investigated extensively for different applications such as blue/ultraviolet light emitting devices (LEDs) [1,2], sun blind solar detectors [3], metal semiconductor field effect transistors (MESFETs) and high electron mobility transistors (HEMTs) [4,5]. However, GaN-based Schottky contacts suffer from abnormal leakage currents under reverse bias, which strongly degrade the gate current characteristics and increase power consumption.…”

Micro-Raman and photoluminescence studies of neutron-irradiated gallium nitride epilayers

“…In recent years, GaN and related compounds have attracted a great deal of interest [1][2][3] due to their wide applications including blue/ultraviolet light-emitting devices, 4,5 sun blind detectors, 6 and high-power/high-temperature electronics. Although GaN-based light-emitting devices including laser diodes have been commercialized, the effects of various defects on the performance of the devices are still far from being fully understood.…”