GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

Liu, Shih-Chien; Chen, Bo‐Yuan; Lin, Yueh Chin; Hsieh, Ting-En; Wang, Huan-Chung; Chang, Edward Yi

doi:10.1109/led.2014.2345130

Cited by 79 publications

(12 citation statements)

References 11 publications

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“…A clear manifestation of this is an increase in S that is associated with V T shifts and g m degradation. These nonrecoverable changes have been observed in several MOS systems [129], including GaN MIS-HEMTs [130].…”

Section: E Interface State Formation In Gan Mis-hemtsmentioning

confidence: 78%

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Alamo

Lee

2019

IEEE Trans. Electron Devices

100

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GaN electronics constitutes a revolutionary technology with power handling capabilities that amply exceed those of Si and other semiconductors in many applications. RF, microwave, and millimeter-wave GaN-based power amplifiers are now deployed in commercial communications, radar, and sensing systems. GaN power transistors for electrical power management are also starting to reach the marketplace. From the dawn of this technology, inadequate transistor stability and reliability have represented stumbling blocks preventing widespread commercial use of GaN electronics. Intense research has been devoted to addressing these issues, and great progress has taken place recently. This article reviews some of the most interesting and significant stability and reliability issues that have plagued GaN power field-effect transistors for RF and power management applications.

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Section: E Interface State Formation In Gan Mis-hemtsmentioning

confidence: 78%

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Alamo

Lee

2019

IEEE Trans. Electron Devices

100

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“…However, fluorine or chlorine residues [12][13][14], as well as surface re-oxidation, are detected on the epi-surface after such pretreatments. In situ plasma-based pre-treatments, such as hydrogen-, fluorine-and nitrogen-based plasmas [12,[15][16][17][18][19][20][21][22][23][24], circumvent re-oxidation. However, plasma treatments involve unwanted effects from high-energy ions.…”

Section: Introductionmentioning

confidence: 99%

“…This causes an unwanted depletion of the two-dimensional electron gas (2DEG) channel resulting in a positive shift of the threshold voltage [21,22]. In contrast, nitrogen-based plasma pre-treatment simultaneously removes surface dangling bonds (by reoccupying nitrogen vacancies) and the native O layer on the surface [18,19]. Several studies investigate plasma-based in situ pre-treatment methods followed by PECVD SiN deposition [15,18,19,21,22].…”

Section: Introductionmentioning

confidence: 99%

Impact of in situ NH₃ pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Chen

Persson

Wen

et al. 2022

Semicond. Sci. Technol.

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The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

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“…There are composition and layer parameters, including TiAlNiAu [1], TiAlW [2], TiAlTaAu [12], TiAuAlNiAu [13], TaTiAlNiAu [14], and many others. The technological processes of OC manufacturing are physical [15] and chemical treatments [16][17][18], passivations [19] and deposition methods: electronic [16][17][18], magnetron [11], thermal, annealing duration and modes [3,13,20].…”

Section: Introductionmentioning

confidence: 99%

Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

Torkhov¹,

Gradoboev²,

Orlova³

et al. 2022

Semicond. Sci. Technol.

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The size effect observed in TiAlNiAu/GaN ohmic contacts (OCs) makes itself evident in the dependence of their relative electrical characteristics R SH , R SK , ρ and geometrical parameter L T on the LTLM test line width Wk . The paper explores the geometry of relief (topography) irregularities and their interface conductivity, indicating the great significance of the fractal geometry for the description of the electrophysical and device characteristics. The regularities discovered can be of great practical importance in terms of OC development and optimization for micro-/nanoelectronics demands.

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GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

Cited by 79 publications

References 11 publications

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Impact of in situ NH₃ pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

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GaN MIS-HEMTs With Nitrogen Passivation for Power Device Applications

Cited by 79 publications

References 11 publications

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Stability and Reliability of Lateral GaN Power Field-Effect Transistors

Impact of in situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

Physical nature of size effects in TiAlNiAu/GaN ohmic contacts to AlGaN/GaN heteroepitaxial structures

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Impact of in situ NH₃ pre-treatment of LPCVD SiN passivation on GaN HEMT performance