GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Uemoto, Yasuhiro; Morita, Tatsuo; Ikoshi, Ayanori; Umeda, Hidekazu; Matsuo, Hideaki; Shimizu, Jun; Hikita, Masahiro; Yanagihara, Manabu; Ueda, T.; Tanaka, Tsuyoshi; Ueda, Daisuke

doi:10.1109/iedm.2009.5424397

Cited by 73 publications

(38 citation statements)

References 5 publications

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“…Indeed, some groups have reported AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) with excellent device performances such as high blocking voltages and low on-state resistances, which are very attractive for high-efficiency power-switching applications [1][2][3][4][5][6][7][8][9][10][11]. In addition, AlGaN/GaN HEMTs have been demonstrated to operate with good switching characteristics and high power conversion efficiencies when used in DC/DC converters and DC/AC inverters [7,[12][13][14].…”

Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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University. His research interests included surface passivation and device processing technologies for III-V compound semiconductors. Currently, his major activity expanded into characterization and control of surfaces and interfaces of GaN and related materials and their application to GaN-based electron devices. He has authored or co-authored over 160 papers in scientific and technical journals.

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Section: Introductionmentioning

confidence: 99%

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Ohi

Asubar

Nishiguchi

et al. 2013

IEEE Trans. Electron Devices

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“…Typical applications are buck and boost converters in a PFC topology (1,2). Fast switching without sacrificing power losses allows shrinking the overall system by over a factor 4, reducing the total bill-of-materials (3).…”

Section: Introductionmentioning

confidence: 99%

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

Moens¹,

Banerjee²,

Constant³

et al. 2016

ECS Trans.

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“…The HFET has a schottky gate electrode over the AlGaN/GaN hetero-junction. The structure keeps the isolation between the GIT and the HFET by the ion implantation [5]. Fig.…”

Section: B Device Structure and Characteristicsmentioning

confidence: 99%

A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

Ujita

Kinoshita

Umeda

et al. 2014

2014 IEEE 26th International Symposium on Power Semiconductor Devices &Amp; IC's (ISPSD)

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In this paper, we present a novel compact DC-DC converter IC in which normally-off GaN-GITs (Gate Injection Transistors) and gate drivers are integrated into one chip. The DC-DC converter IC can achieve higher efficiency and smaller chip size by reducing parasitic inductances between switching power devices and gate drivers. The gate driver, having a DCFL (Direct Coupled FET Logic) with a buffer amplifier which is consisted of a GaN-HFET (Hetero-junction FET) andGaN-GITs can operate with higher speed and lower power consumption. The fabricated DC-DC converter IC exhibits a peak efficiency as high as 86.6% at 2MHz for the 12V-1.8V conversion.

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GaN monolithic inverter IC using normally-off gate injection transistors with planar isolation on Si substrate

Cited by 73 publications

References 5 publications

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

Current Stability in Multi-Mesa-Channel AlGaN/GaN HEMTs

(Invited) Intrinsic Reliability Assessment of 650V Rated AlGaN/GaN Based Power Devices: An Industry Perspective

A compact GaN-based DC-DC converter IC with high-speed gate drivers enabling high efficiencies

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