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relatively low breakdown strength in conventional SiN passivation is the bottleneck in this case. Buffer leakage is We report ultra high voltage AlGaN/GaN another limiting factor that has hindered the projected heterojunction transistors (UFETs) on sapphire with thick increase of the breakdown voltage. Thus, reported off-state poly-AlN passivation. Extremely high blocking voltage of breakdown voltage of AlGaN/GaN UFETs maintaining low 8300V is achieved while maintaining relative low specific on-state resistance has been below 1900V [1-6] at highest to on-state resistance (Ron-A) of 186mQ*cm2. Via-holes the best of our knowledge. through sapphire at the drain electrodes enable very efficientIn this paper, we demonstrate ultra high breakdown layout of the lateral HFET array as well as better heat voltages of AlGaN/GaN HFETs using thick poly-crystalline dissipation.AlN (poly-AlN) passivation combined with field plates. The poly-AlN gives high breakdown strength underneath the Introduction field plates together with better heat dissipation suppressing the effect of the surface traps that would cause so-called AlGa/GaNUFEs ar widly nvesigatd fr fuure

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Current collapse is suppressed up to 800 V of drain voltage in our proposed device, Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT), where an additional p-GaN layer is grown on the AlGaN barrier layer and is connected to the drain electrode. We present, based on a device simulation and electroluminescence study, that the hole injection from the additional drain-side p-GaN at the OFF state compensates the hole emission in the epilayer. As a result, the gate-drain access region is not negatively charged at the OFF state, resulting in the drastic suppression of current collapse in HD-GIT.