GaN MOSHEMT employing HfO₂as a gate dielectric with partially etched barrier

Abstract

In order to suppress the gate leakage current of a GaN high electron mobility transistor (GaN HEMT), a GaN metal-oxide-semiconductor high electron mobility transistor (MOSHEMT) is proposed, in which a metal-oxide-semiconductor gate with high-dielectric-constant HfO 2 as an insulating dielectric is employed to replace the traditional GaN HEMT Schottky gate. A 0.5 μm gate length GaN MOSHEMT was fabricated based on the proposed structure, the Al Ga N 0.28 0.72 barrier layer is partially etched to produce a higher transconductance without deteriorating the transport characteristics of the two-dimensional electron gas in the channel, the gate dielectric is HfO 2 deposited by atomic layer deposition. Current-voltage characteristics and radio frequency characteristics are obtained after device preparation, the maximum current density of the device is 900 mA mm −1 , the source-drain breakdown voltage is 75 V, gate current is significantly suppressed and the forward gate voltage swing range is about ten times higher than traditional GaN HEMTs, the GaN MOSHEMT also demonstrates radio frequency characteristics comparable to traditional GaN HEMTs with the same gate length.

Performance Improvement in AlGaN/GaN High‐Electron‐Mobility Transistors by Low‐Temperature Inductively Coupled Plasma–Chemical Vapor Deposited SiNx as Gate Dielectric and Surface Passivation

“…[6,7] Another primary concern in HEMTs is the large gate leakage current in metal/semiconductor Schottky gate contact. [8] Various dielectrics such as Al 2 O 3 , [9] SiO 2 , [10] HfO 2 , [11] and TiO 2 [12] are used for the gate dielectric. However, the presence of Ga─O bonds at the oxide/AlGaN interface is a matter of concern in oxide-based dielectrics because it introduces additional interface traps.…”

Performance Enhancement in N2 Plasma Modified AlGaN/AlN/GaN MOS-HEMT Using HfAlOX Gate Dielectric with Γ-Shaped Gate Engineering

“…In order to avoid the degradation of the transport characteristics of the carrier the partially recessed GaN HEMT structure was proposed [ 9 ]. The Cl 2 -based inductive coupled plasma (ICP) dry etching has been widely used, to realize the partially recessed-gate structure.…”

Rapid detection of biomolecules in a dielectric modulated GaN MOSHEMT

“…Although gate-all-around junctionless transistor (GAA-JLT) [ 19 ] and inversion mode MOSFETs [ 20 ] have been demonstrated in past for label-free electrochemical detection of neutral biomolecule. As compare to these devices GaN MOSHEMT devices have advantages of reduced gate leakage current density, high breakdown voltage and high electron mobility under both low and high transverse fields [ 21 , 22 ]. The structure is analyzed by using dielectric modulation technique.…”