2009
DOI: 10.1002/adma.200800529
|View full text |Cite
|
Sign up to set email alerts
|

GaN Nanofibers based on Electrospinning: Facile Synthesis, Controlled Assembly, Precise Doping, and Application as High Performance UV Photodetector

Abstract: Nitride nanofibers have been synthesized based on a simple electrospinning technique for the first time. No catalysts or templates are needed in this new synthetic method. Highly oriented GaN nanofiber arrays, as well as a high‐performance UV photodetector based on single GaN nanofiber assembled FET devices, can be facilely fabricated using this technique. Precise doping of other elements into the GaN nanofibers is easy by this solution‐based synthetic method.

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
111
1

Year Published

2010
2010
2017
2017

Publication Types

Select...
7
1

Relationship

1
7

Authors

Journals

citations
Cited by 170 publications
(113 citation statements)
references
References 25 publications
1
111
1
Order By: Relevance
“…63 Using electrospinning, extremely long (up to 1 cm) but very thin (40 nm diameter) GaN nanofibers could be produced, using poly(vinyl pyrrolidone) (PVP) as the matrix polymer. 64 When exposed to UV light, the conductance of these semiconductors greatly increased, resulting in an electric signal as output for UV detection. The conductance of the electrospun GaN nanowires increased nearly 830 times which is over 10-fold higher than for GaN nanowires produced by classical chemical vapour deposition.…”
Section: Photo/optical-responsive Electrospun Fibersmentioning
confidence: 99%
“…63 Using electrospinning, extremely long (up to 1 cm) but very thin (40 nm diameter) GaN nanofibers could be produced, using poly(vinyl pyrrolidone) (PVP) as the matrix polymer. 64 When exposed to UV light, the conductance of these semiconductors greatly increased, resulting in an electric signal as output for UV detection. The conductance of the electrospun GaN nanowires increased nearly 830 times which is over 10-fold higher than for GaN nanowires produced by classical chemical vapour deposition.…”
Section: Photo/optical-responsive Electrospun Fibersmentioning
confidence: 99%
“…Electrospinning technique can also be used for fabricating nanofibers composed by non-oxide ceramics including carbide, boride, nitride, silicide and sulphide [38,50,[79][80][81][82][83][84][85][86][87]. Wu et al synthesized nitride nanofibers via electrospinning for the first time [50].…”
Section: Electrospinning Of Ceramic Nanofibersmentioning
confidence: 99%
“…Wu et al synthesized nitride nanofibers via electrospinning for the first time [50]. Group III N alloys, particularly GaN, have a huge potential for revolutionary semiconductor device con gurations.…”
Section: Electrospinning Of Ceramic Nanofibersmentioning
confidence: 99%
See 1 more Smart Citation
“…[6][7][8] For this reason, photodetectors commonly use materials such as ZnO, SnO 2 , ZnO/CdTe, ZnO/Ti,TiO 2 , GaN, and Ga 2 O 3 . [9][10][11][12][13][14][15] In order to fabricate photodetectors, expensive or complex photolithography and vacuum processes are required, which limits their application and environment for general users. To address this limitation, dispensing methods, such as airbrush spray and the spray pyrolysis process, were introduced to form Ag nanowire and carbon a Authors to whom correspondence should be addressed: shju@kgu.ac.kr 2158-3226/2016/6(4)/045218/7 6, 045218-1 © Author(s) 2016.…”
Section: Introductionmentioning
confidence: 99%