GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements

Mansfield, Lorelle M.; Bertness, Kristine A.; Blanchard, Paul T.; Harvey, Todd E.; Sanders, Aric W.; Sanford, Norman A.

doi:10.1007/s11664-009-0672-z

Cited by 36 publications

(37 citation statements)

References 37 publications

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“…This is due to memory effect of gate which is also found in GaN nanowire FET with "gating hysteresis". [ 31,32 ] In the early stage of GaN HEMT devices, researches attributed similar current instability to the trapped charges which serves as a secondary "virtual gate". [ 33 ] The traps here could be in the gate oxide SiO 2 , at the SiO 2 /Si or GaN membrane/SiO 2 interfaces.…”

Section: Field Effect Transistormentioning

confidence: 99%

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor

Xiong

Park

Song

et al. 2014

Adv Funct Materials

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We report in this work the fabrication of single crystal GaN nanomembranes, with a thickness as low as 50 nm. Large area (≥5 mm × 5 mm) GaN membranes are produced by electrochemical etching (ECE) with a special high-conductivity sacrifi cial underlayer. Large-area, crackfree transfer of GaN NMs have been performed onto metal, glass, and polymer target substrates. The transport properties of freestanding GaN nanomembranes are analyzed using UV-assisted Hall measurements. The interaction of the carriers with the surface electronic states are investigated by the intensity dependence of the photoconductor gain, and by the temperature-dependent measurements of photocurrent decay. The transport property of GaN NM, down to a thickness of 90 nm, remains very comparable to that from much thicker GaN structures. Enhancement-mode fi eld effect transistors (FETs) have been fabricated and demonstrated on a SiO 2 / Si(001) wafer, suggesting that GaN nanomembranes can be a new candidate for fl exible electronics requiring high power and high-frequency. Results and Discussion Nanomembrane FabricationThe principle of using an ECE process to selectively remove underlying GaN sacrifi cial layers has been described before. [ 12,13 ] Multi-layered GaN structures having nanomembrane layers (50 to 500 nm thick) on top of heavily-doped ( n ≈ 1 × 10 19 cm −3 ) GaN sacrifi cial layers were grown by metal-organic chemical vapor deposition (MOCVD) process on sapphire. To obtain large-area NM within a reasonable time, a periodic array of via holes were created such that the undercut etching can proceeds uniformly around these openings. The via-holes are squares with a dimension of 10 µm and a diagonal periodicity of 25, 50, and 100 µm. These holes were created by Cl-based inductively coupled plasma (ICP) etching to expose the sacrifi cial layer. The photoresist (Shipley S1827) used during the Cl-ICP etching was retained to protect the front surface of the membrane during ECE. The nanomembrane layers became detached from the substrate once the undercut regions around each opening coalesce with the adjacent ones. GaN NMs were cleaned by rinsing sequentially in DI water, acetone and isopropyl-alcohol (IPA). After cleaning, they were transferred on to other substrates Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor Kanglin Xiong , Sung Hyun Park , Jie Song , Ge Yuan , Danti Chen , Benjamin Leung , and Jung Han * Large-area, free-standing and single-crystalline GaN nanomembranes are prepared by electrochemical etching from epitaxial layers. As-prepared nanomembranes are highly resistive but can become electronically active upon optical excitation, with an excellent electron mobility. The interaction of excited carriers with surface states is investigated by intensity-dependent photoconductivity gain and temperature-dependent photocurrent decay. Normally off enhancement-type GaN nanomembrane MOS transistors are demonstrated, suggesting that GaN could be used in fl exible electronics for high power and hig...

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Section: Field Effect Transistormentioning

confidence: 99%

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor

Xiong

Park

Song

et al. 2014

Adv Funct Materials

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“…For the Ohmic contact devices with Ti/Ag electrodes, a transmission line analysis yields specific contact resistivity of the metal-nanowire contact [36][37][38]. The electrical contact resistance R m between the metal and the nanowire is [36,38] …”

Section: Electrothermal Analysis Of Zinc Oxide Nanowiresmentioning

confidence: 99%

“…Electrothermal transport data for relevant materials are examined to assess the impact of relative heating on an array of nanowire devices proposed for energy conversion applications. Figure 4.2 shows the relative heating versus specific contact resistivity for silicon [36,[44][45][46][47][48], gallium nitride [38,[49][50][51][52], and zinc oxide [2,[53][54][55]. Using data reported by previous studies, the relative heat generation rate is determined assuming typical metal-nanowire contact length, nanowire length, and device current of 1 µm, 10 µm, and 1 µA, respectively.…”

Section: Development and Application Of A Relative Heat Generation Mementioning

confidence: 99%

Electrothermal phenomena in zinc oxide nanowires and contacts

LeBlanc

Phadke

Kodama

et al. 2012

Applied Physics Letters

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Heat generation along nanowires and near their electrical contacts influences the feasibility of energy conversion devices. This work presents ZnO nanowire electrical resistivity data and models electrothermal transport accounting for heat generation at metal-semiconductor contacts, axial thermal conduction, and substrate heat losses. The current-voltage relationships and electron microscopy indicate sample degradation is caused by the interplay of heat generation at contacts and within the nanowire volume. The model is used to interpret literature data for Si, GaN, and ZnO nanowires. This work assists with electrothermal nanowire measurements and highlights practical implications of utilizing solution-synthesized nanowires. The work was conducted at Stanford University from 2010

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“…[24][25][26] In this regard, Al(Ga)N-based UV LEDs, [27][28][29] UV random lasers, 21,[29][30][31] 35 and photoconductivity measurements. 36 However, these measurements involve challenging processing procedures. Moreover, the composition and doping fluctuations in/between AlGaN nanowires strongly influence the electrical properties of the nanowire array.…”

mentioning

confidence: 99%

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

et al. 2018

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GaN Nanowire Carrier Concentration Calculated from Light and Dark Resistance Measurements

Cited by 36 publications

References 37 publications

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor

Single Crystal Gallium Nitride Nanomembrane Photoconductor and Field Effect Transistor

Electrothermal phenomena in zinc oxide nanowires and contacts

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

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