2021
DOI: 10.1021/acsomega.0c05587
|View full text |Cite
|
Sign up to set email alerts
|

GaN Nanowire Growth Promoted by In–Ga–Au Alloy Catalyst with Emphasis on Agglomeration Temperature and In Composition

Abstract: The crystallographic orientation control of GaN nanowires (NWs) has been widely investigated by varying the V–III ratio. Here, we report the tuning of crystallographic orientation of GaN NWs by varying the composition of indium (In) in gallium–gold (Ga–Au) alloy catalyst using metal–organic chemical vapor deposition (MOCVD). The c-plane GaN thin film and sapphire substrate are used as growth templates. We found that the substrates of same orientation have a negligible influence on the orientation of the GaN NW… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
2
2

Citation Types

0
6
0

Year Published

2021
2021
2024
2024

Publication Types

Select...
7

Relationship

3
4

Authors

Journals

citations
Cited by 11 publications
(6 citation statements)
references
References 39 publications
0
6
0
Order By: Relevance
“…Figure 2a shows the SEM image of well‐separated spherical In–Ga–Au alloy particles, the details of agglomeration process and the optimization of In–Ga–Au composition is discussed in our preliminary study. [ 34 ] The overall morphology of the GaN:Mg NWs is shown in low and high magnification SEM images (Figure 2b,c); the average length of the NWs is ≈5 µm. The NWs are smoothly grown on all the area of tungsten foil with same morphology.…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Figure 2a shows the SEM image of well‐separated spherical In–Ga–Au alloy particles, the details of agglomeration process and the optimization of In–Ga–Au composition is discussed in our preliminary study. [ 34 ] The overall morphology of the GaN:Mg NWs is shown in low and high magnification SEM images (Figure 2b,c); the average length of the NWs is ≈5 µm. The NWs are smoothly grown on all the area of tungsten foil with same morphology.…”
Section: Resultsmentioning
confidence: 99%
“…The NWs exhibited the smaller diameter than the spherical In-Ga-Au metal alloy particles which is generally observed in VLS growth process. [29,34] In In-Ga-Au metal alloy particles, Au is the primary catalyst which lowers the activation energy barrier and enhances the growth rate of NWs. Once the growth is initiated, the special alloy particles also experience the lateral growth with very low growth rate making a few nm thick layer around the bottom surface of NWs, as shown in Figure 2b.…”
Section: Resultsmentioning
confidence: 99%
“…Structures of the BaM type possess uniaxial anisotropy. Such structures are characterized by significant growth anisotropy [ 19 ]: under supercooling conditions, they form needles, rods, hexagonal plates, etc. It seems to us that, for materials like BaM crystalline, magnetic anisotropy, as well as a superhydrophobic state, can be achieved using short-term plasma treatment without hydrophobic coatings.…”
Section: Introductionmentioning
confidence: 99%
“…The successful growth of semi-insulating piezoelectric semiconductors is a key factor in suppressing the free-carrier screening effect 40,43,44 . Compared with ZnO, GaN has a well-developed growth process, and its p-type doping can easily be controlled.…”
Section: Introductionmentioning
confidence: 99%