GaN-on-silicon present challenges and future opportunities

Boles, Timothy

doi:10.23919/eumic.2017.8230650

Cited by 35 publications

(12 citation statements)

References 5 publications

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“…Considering the lower thermal conductivity of Si as compared to that of the standard silicon-carbide (SiC) typically adopted in GaN processes [26], a careful technology assessment and power budget analysis was initially carried out. In addition, an accurate thermal evaluation of the technology was performed by using Raman measurement [27].…”

Section: Mmic Designmentioning

confidence: 99%

A high efficiency 10W MMIC PA for K-b and satellite communications

Colantonio

Giofrè

Vitobello³

et al. 2021

Int. J. Microw. Wireless Technol.

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This paper discusses the design steps and experimental characterization of a monolithic microwave integrated circuit (MMIC) power amplifier developed for the next generation of K-band 17.3–20.2 GHz very high throughput satellites. The technology used is a commercially available 100-nm gate length gallium nitride on silicon process. The chip was developed taking into account the demanding constraints of the spacecraft and, in particular, carefully considering the thermal constraints of such technology, in order to keep the junction temperature in all devices below 160°C in the worst-case condition (i.e., maximum environmental temperature of 85°C). The realized MMIC, based on a three-stage architecture, was first characterized on-wafer in pulsed regime and, subsequently, mounted in a test-jig and characterized under continuous wave operating conditions. In 17.3–20.2 GHz operating bandwidth, the built amplifier provides an output power >40 dBm with a power added efficiency close to 30% (peak >40%) and 22 dB of power gain.

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Section: Mmic Designmentioning

confidence: 99%

A high efficiency 10W MMIC PA for K-b and satellite communications

Colantonio

Giofrè

Vitobello³

et al. 2021

Int. J. Microw. Wireless Technol.

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“…GaN-on-diamond technology is currently in the research phase; however, test data are very promising and prove that this technology can provide very high power density with a smaller footprint. [24][25][26][27][28][29] Figure 4 shows the development timeline for RF GaN technology classified based on substrate and application. Even though both GaN-on-SiC and GaN-on-Si devices started off almost at the same time, GaN-on-SiC technology matured much faster.…”

Section: Gan Power Electronics Roadmapmentioning

confidence: 99%

Commercial GaN-Based Power Electronic Systems: A Review

Pushpakaran

Subburaj

Bayne

2020

Journal of Elec Materi

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Wide bandgap semiconductor technology is gaining widespread acceptance in the area of high-power and high-temperature power electronics. Gallium nitride (GaN) not only has a wide bandgap of 3.4 eV and all the associated superior electronic properties but also enables the development of high-mobility power devices which is critical in increasing the power density of a power electronics system. Since a commercial GaN power transistor has a lateral structure as opposed to the traditional vertical device structure, commercially available devices are rated below 1000 V breakdown voltage with a maximum value of 900 V and typical value around 650 V. The primary focus of this review will be to introduce readers to the commercially available power electronic systems developed by various manufacturers which employ GaNbased power devices and highlight their remarkable performance which surpasses existing technology. This review also includes a brief introduction on GaN technology followed by current market study showing the roadmap of integration of GaN-based power electronics in the power industry.

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“…In the past, the GaN HEMT was mainly fabricated on SiC substrates for high-frequency applications owing to the better quality of epitaxy and the better heat dissipation. With improved techniques in epitaxial growth and layout optimization for GaN-on-Si devices, several manufactures have announced the launch of the mass production of GaN-on-Si technology for high-frequency applications [ 34 ].…”

Section: Introductionmentioning

confidence: 99%

The Evolution of Manufacturing Technology for GaN Electronic Devices

Liu

Langpoklakpam

et al. 2021

Micromachines

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GaN has been widely used to develop devices for high-power and high-frequency applications owing to its higher breakdown voltage and high electron saturation velocity. The GaN HEMT radio frequency (RF) power amplifier is the first commercialized product which is fabricated using the conventional Au-based III–V device manufacturing process. In recent years, owing to the increased applications in power electronics, and expanded applications in RF and millimeter-wave (mmW) power amplifiers for 5G mobile communications, the development of high-volume production techniques derived from CMOS technology for GaN electronic devices has become highly demanded. In this article, we will review the history and principles of each unit process for conventional HEMT technology with Au-based metallization schemes, including epitaxy, ohmic contact, and Schottky metal gate technology. The evolution and status of CMOS-compatible Au-less process technology will then be described and discussed. In particular, novel process techniques such as regrown ohmic layers and metal–insulator–semiconductor (MIS) gates are illustrated. New enhancement-mode device technology based on the p-GaN gate is also reviewed. The vertical GaN device is a new direction of development for devices used in high-power applications, and we will also highlight the key features of such kind of device technology.

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GaN-on-silicon present challenges and future opportunities

Cited by 35 publications

References 5 publications

A high efficiency 10W MMIC PA for K-b and satellite communications

A high efficiency 10W MMIC PA for K-b and satellite communications

Commercial GaN-Based Power Electronic Systems: A Review

The Evolution of Manufacturing Technology for GaN Electronic Devices

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