Reverse leakage current characteristics of Ni Schottky contacts to GaN grown on Si is experimentally studied using high electron mobility transistors (HEMT). The temperature in this study is between 273 K and 428 K. The reverse gate leakage current is found to be dominated by Frenkel-Poole emission, a trap-assisted process, when the reverse electric field is smaller than 1.4 MV/cm. For electric field larger than 1.6 MV/cm, the underlying mechanism is mainly Fowler-Nordheim tunneling, an electric-field-dominated process. As a result, properly engineering electric field is considered critical for reducing reverse leakage current in GaN-on-Si HEMT for high-voltage applications.

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