AlGaAs PIN diode multi-octave, mmW switches

Boles, Timothy; Brogle, J.; Hoag, David; Curcio, D.

doi:10.1109/comcas.2011.6105783

Cited by 36 publications

(14 citation statements)

References 5 publications

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“…Series-Shunt configuration has optimal responses in both insertion loss and isolation in a wide frequency bandwidth [7]. In general, both compound microwave switches here analyzed offer improved overall performance.…”

Section: Introductionmentioning

confidence: 98%

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales

Vega

Badaoui

Hinojosa

2014

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Se presenta un análisis de desempeño de conmutadores de microondas compuestos, de una entrada y una salida (SPST), diseñados con diodos p-i-n tipo masa con diferentes tipos de materiales semiconductores para las bandas de frecuencia Ku y Ka. Las dos configuraciones de conmutadores compuestos más comunes son aquellos con diodos p-i-n ubicados en diseños serie-paralelo y serie-paralelo-serie (TEE) y aquí son analizados utilizando materiales semiconductores de Si, GaAs, GaN-WZ, GaN-ZB, GaSb, InP y SiC. Se presenta la metodología utilizada en los cálculos de resistencia serie y capacitancia de unión en los diodos p-i-n con el propósito de calcular los parámetros de desempeño propios de cada dispositivo conmutador. Estos parámetros son pérdida de inserción y aislamiento. Los conmutadores de tipo serie-paralelo, exceptuando el conmutador basado en diodo p-i-n de SiC-6 H, exhiben pérdidas de inserción menores a 0.2 dB y aislamiento hasta 41dB a la frecuencia de operación de 12 GHz. El conmutador diodo p-i-n tipo TEE con base en GaN-ZB tiene la mejor respuesta de pérdida de inserción menor a 0.23 dB y aislamiento hasta 52 dB, a las frecuencias de operación de 12 GHz y 30 GHz. El conmutador compuesto con base en diodo p-i-n de GaSb alcanza el mejor desempeño a la frecuencia de 12 GHz. Los conmutadores de microondas con configuración TEE tienen respuestas satisfactorias para la frecuencia de 30 GHz.

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Section: Introductionmentioning

confidence: 98%

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales

Vega

Badaoui

Hinojosa

2014

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“…While both the PiN diode [1] and RF MEMS [2] technologies report very low loss and high isolation relative to conventional FET switching technologies, the low power consumption, less demanding control biasing networks and fast switching capabilities offered by FET RF switches remains attractive [3]. However, FET based RF switches, including Si CMOS [4], GaAs pHEMT [5], or InP [6] and GaN HEMTs [7] based technologies have reported substantially higher insertion losses than the PiN diode and RF MEMS technologies.…”

Section: Introductionmentioning

confidence: 99%

Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET)

Howell

Stewart

Freitag

et al. 2014

2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS)

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A low loss, high isolation, broadband RF switch has been developed using a novel type of field effect transistor structure that exploits the use of a super-lattice structure in combination with a three dimensional, castellated gate to achieve excellent RF switch performance. Using an AlGaN/GaN super-lattice epitaxial layer, this SuperLattice Castellated Field Effect Transistor (SLCFET) was used to build 1-18 GHz SPDT RF switches. Measured insertion loss of the SPDT at 10GHz was -0.4 dB, with -35 dB of isolation and -23 dB of return loss, along with a measured linearity OIP3 value 62 dBm and a P0.1dB of 34 dBm. Index Terms -Field effect MMIC, Monolithic Microwave Integrated Circuit (MMIC), Switches, Wideband.

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“…For the first technique, several examples can be found in [5][6][7]. Vertical PIN diode cross section was proposed in [5] using SiGe BiCMOS process to improve insertion loss and isolation.…”

Section: Introductionmentioning

confidence: 99%

“…Vertical PIN diode cross section was proposed in [5] using SiGe BiCMOS process to improve insertion loss and isolation. The other materials and processes used for better isolation is heterojunction InP/InGaAs PIN diode [6] and heterojunction AlGaAs/GaAs PIN diode [7]. However, these new fabrication processes and materials are sometime complicating the production process and increase the cost.…”

Section: Introductionmentioning

confidence: 99%

Bandstop to Allpass Reconfigurable Filter Technique in SPDT Switch Design

Shairi

Ahmad²,

Wong³

2013

PIER C

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Abstract-In this paper, a bandstop to allpass reconfigurable filter technique is proposed in Single Pole Double Throw (SPDT) switch design. Proof of concept of the bandstop to allpass reconfigurable filter is presented. It is physically realized using transmission line and radial stub in 3.5 GHz band (3.4 to 3.6 GHz). The isolation, insertion loss and return loss of the SPDT switches are analyzed and to validate this technique the prototypes are fabricated using FR4 substrate with a thickness of 16 mm. A very good agreement is shown between the simulated and measured results. Using this technique, it is able to produce more than 30 dB isolation with minimum number of PIN diodes, thus reducing 42.7% of the total circuit size compared with conventional design. Besides, additional 22.9% of isolation bandwidth can be obtained with the use of radial stub compared with transmission line stub. The potential application of this SPDT switch is Time Division Duplex (TDD) switching for WiMAX and LTE communication system in the 3.5 GHz band.

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AlGaAs PIN diode multi-octave, mmW switches

Cited by 36 publications

References 5 publications

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales

Análisis de desempeño de conmutadores de microondas tipo serie-paralelo y TEE de diferentes materiales semiconductores para comunicaciones Satelitales

Low Loss, High Performance 1-18 GHz SPDT Based on the Novel Super-Lattice Castellated Field Effect Transistor (SLCFET)

Bandstop to Allpass Reconfigurable Filter Technique in SPDT Switch Design

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