GaN-on-Silicon – Present capabilities and future directions

Boles, Timothy

doi:10.1063/1.5024484

Cited by 28 publications

(21 citation statements)

References 5 publications

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“…In this work, the stepped impedance transformation was adopted for the compact design using microstrip lines which are fabricated on a 100 μm-thick high-resistivity Si substrate (loss tangent = 0.015). Note that SiC substrates exhibit a few orders of magnitude higher resistivity than Si one [8,15]. Figure 2 shows the simulated characteristics of the microstrip lines as a function of signal metal width at 90 GHz.…”

Section: Design Of W-band Three-stage Power Amplifiermentioning

confidence: 99%

Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

et al. 2021

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In this paper, a high-power amplifier integrated circuit (IC) in gallium-nitride (GaN) on silicon (Si) technology is presented at a W-band (75–110 GHz). In order to mitigate the losses caused by relatively high loss tangent of Si substrate compared to silicon carbide (SiC), low-impedance microstrip lines (20–30 Ω) are adopted in the impedance matching networks. They allow for the impedance transformation between 50 Ω and very low impedances of the wide-gate transistors used for high power generation. Each stage is matched to produce enough power to drive the next stage. A Lange coupler is employed to combine two three-stage common source amplifiers, providing high output power and good input/output return loss. The designed power amplifier IC was fabricated in the commercially available 60 nm GaN-on-Si high electron mobility transistor (HEMT) foundry. From on-wafer probe measurements, it exhibits the output power higher than 26.5 dBm and power added efficiency (PAE) higher than 8.5% from 88 to 93 GHz with a large-signal gain > 10.5 dB. Peak output power is measured to be 28.9 dBm with a PAE of 13.3% and a gain of 9.9 dB at 90 GHz, which corresponds to the power density of 1.94 W/mm. To the best of the authors’ knowledge, this result belongs to the highest output power and power density among the reported power amplifier ICs in GaN-on-Si HEMT technologies operating at the W-band.

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Section: Design Of W-band Three-stage Power Amplifiermentioning

confidence: 99%

Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

et al. 2021

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“…Nowadays, the epitaxial growth of III-nitride films and heterostructures on Si (111) substrates is highly attractive owing to the availability of the low-cost and large-size Si substrates, compatibility with standard Si processes, as well as the potential for integration with Si-based devices [19], [20]. Unfortunately, compared with sapphire and SiC substrates, the growth of GaN on Si is limited by the large lattice mismatch and thermal expansion coefficient (TEC) mismatch between GaN and Si, which may result in tensile stress during the process of cooling down from the quite high growth temperature [21].…”

Section: Introductionmentioning

confidence: 99%

Thermal Response and TC f of GaN/AlN Heterostructure Multimode Micro String Resonators From −10 °C Up to 325 °C

Sui

Zheng

Lin

et al. 2021

J. Microelectromech. Syst.

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We report on the first experimental characterization and analysis of the thermal response and temperature coefficient of resonance frequency (TC f ) of gallium nitride/aluminum nitride (GaN/AlN) heterostructure micro string resonators, in a wide temperature range from −10 • C up to 325 • C. Thanks to its excellent electrical and mechanical properties and chemical inertness, GaN has recently stimulated growing interests in GaN microelectromechanical systems (MEMS) for emerging highpower, high-temperature, and harsh-environment applications. GaN films on Si wafers often require AlN buffer layers, thus the residual tensile stress profile in the GaN epilayers and GaN/AlN hetero-layers can play a key role in affecting the MEMS specifications and performance. Here we design and fabricate GaN/AlN heterostructure micro string resonators with length L = 100, 200 and 300 µm to probe the stress and thermal effects on resonance behavior. All out-of-plane flexural modes show clear string behavior, and the multimode resonance frequencies downshift almost linearly with increasing temperature up to 325 • C. The linear temperature dependence and TC f values of GaN/AlN heterostructure resonators can be directly employed for thermal sensing. Comparison among different devices indicates that higher tensile stress levels contribute to smaller TC f values, suggesting strain engineering may be exploited for intentionally regulating the TC f .

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“…Recently, there has been a demand for the stable Hall sensor operation at extreme temperatures [23,24] and also in harsh radiation environments as encountered in space exploration, determination of Curie temperatures of ferromagnetic materials [25], magnetic diagnosis of thermonuclear reactors [26] and current sensing in electric vehicles [27]. Emergence of new promising materials and advances in processing technologies continue to propel research on Hall sensors [28][29][30][31][32][33].…”

Section: Introductionmentioning

confidence: 99%

“…Many of the reported AlGaN/GaN Hall sensors are grown on sapphire substrates, including some recent application [32]. Silicon (Si) substrates offer the much needed integrability of the Hall sensing element with CMOS on-chip signal conditioning circuits [28] in applications where the operating temperature range allows the use of CMOS technology. Numerous methods have been proposed in this regard [58,59].…”

Section: Introductionmentioning

confidence: 99%

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

Kumar

Muralidharan

Narayanan

2021

IET Circuits, Devices & Syst

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The authors report experimental investigations on Hall sensors based on AlGaN/GaN heterojunctions grown on silicon 111 (Si 111) substrates. Realisation of two-dimensional electron gas-based Hall sensors on Si substrates can have the advantages of low cost and integrability with complementary metal-oxide semiconductor circuits. Design and fabrication of such Hall sensors and their characterisation over a wide temperature range of 75 to 500 K are reported. The authors experimentally investigate the temperature dependence of the transresistances, sheet resistance and current-related sensitivity (or gain) of such Hall sensors. The current-related sensitivity is shown to be reasonably constant over the complete temperature range and certain inevitable variations in current-related sensitivity can easily be compensated. The temperature dependence of the transresistance can be used for such compensation. The variation of the geometrical correction factor of the Hall sensor with the applied magnetic field strength and the operating temperature is also studied. The authors also demonstrate the possibility of realising Hall sensors with a high geometrical correction factor ( ≈0.97), which is practically insensitive to variations in temperature ( ≃2% from 75 to 500 K) and applied magnetic field, for applications such as in electromechanical devices.This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.

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GaN-on-Silicon – Present capabilities and future directions

Cited by 28 publications

References 5 publications

Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

Design of W-Band GaN-on-Silicon Power Amplifier Using Low Impedance Lines

Thermal Response and TC f of GaN/AlN Heterostructure Multimode Micro String Resonators From −10 °C Up to 325 °C

Hall‐effect sensors based on AlGaN/GaN heterojunctions on Si substrates for a wide temperature range

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