GaN power device and reliability for automotive applications

Kachi, Tetsu; Kikuta, Daigo; Uesugi, Tsutomu

doi:10.1109/irps.2012.6241815

Cited by 34 publications

(26 citation statements)

References 7 publications

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“…The gate insulator is SiO 2 (thickness=50 nm, ε=3.9). Figure 6 is the electric field strength under the gate edge for a drain bias varying from 100 to 1200 V [32]. For a drain bias for 600 V, the electric field strength in the SiO 2 film is 8 MV/cm, which is near the breakdown field strength for SiO 2 .…”

Section: Reliabilitymentioning

confidence: 95%

Current status of GaN power devices

Kachi

2013

IEICE Electron. Express

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Abstract:The performance of GaN power devices has been rapidly improving. Recently, the main approach is the use of AlGaN/GaN HEMT structures on Si substrates, for which the target breakdown voltage is initially 600 V or less. Although issues still remain with regard to current collapse and the threshold voltage required for normallyoff operation, many companies have announced their intention to commercialize such devices. In this report, recent developments concerning GaN power devices are reviewed, and unresolved issues and future expectations are discussed.

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Section: Reliabilitymentioning

confidence: 95%

Current status of GaN power devices

Kachi

2013

IEICE Electron. Express

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“…Miniaturization of passive elements such as the inductor and capacitor by high-frequency switching and cooling system simplification will significantly reduce PCU size. Because SiC makes high output possible, as opposed to GaN, SiC power devices will be used in the boost converter and inverter, and GaN power devices will be used in the isolated DC-DC converter or low-voltage converter of auxiliary systems [6]. By using SiC power devices in the PCU of HEVs, mileage improvement of about 5-10 % is expected [7].…”

Section: Present Statusmentioning

confidence: 99%

Power Electronics for Vehicles and Energy Systems

Umeno

2016

Energy Technology Roadmaps of Japan

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Power electronics that enable DC-AC, AC-DC, or DC-DC conversion of electric power are one of the key technologies for the spread of electric-drive vehicles and renewable energy systems such as PV and wind turbine generators that address the global warming issue and contribute to energy saving. In particular, electrification of vehicles that eliminate about 20 % of total CO 2 emissions contributes to overall reduction of those emissions, and power electronics become an important technology in vehicle electrification. Wide-bandgap semiconductors such as SiC or GaN are important to future technical development of power electronics. Compared with Si, SiC has superior properties in that it has three times the bandgap, twice the saturation velocity, ten times greater breakdown field, and three times greater thermal conductivity. Given these characteristics, wide-bandgap power devices can be driven at high frequency and high temperature, and drastic downsizing of the converter and loss reduction are enabled. By replacing conventional Si power devices with SiC, significant energy saving is anticipated.

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“…11 was proposed to suppress the hole accumulation beneath the gate [15]. The p-type layer blocks the electron flow between the source and channel at the on-state and so should be formed partially in the source-channel region to maintain the electron current path.…”

Section: Breakdown Characteristic Designmentioning

confidence: 99%