GaN reactive ion etching using SiCl4:Ar:SF6 chemistry

Sillero, E.; Calle, F.; Sánchez-García, M.Á.

doi:10.1007/s10854-005-2306-4

Cited by 5 publications

(5 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Figure 2 shows the evolution of the etch rate versus SF 6 mass flow. The obtained results are in good accordance with [16,20]. The etch rate increases by a factor of 2.8 and reaches the value of 53 nm min −1 for 15 sccm of SF 6 .…”

Section: Sicl 4 /Sf 6 Plasmasupporting

confidence: 84%

“…Thus, the production of chlorine radicals is enhanced. The experimental parameters were 50 sccm of SiCl 4 , a pressure of 1 Pa, a bias of −100 V and a substrate temperature of 20 • C. Figure 1 presents the evolution of the etch rate versus the source power (dashed line with square, lower x-axis) between 1500 W and 2500 W. An increase in the etch rate is observed between 1500 W and 2000 W, with a maximal etch rate of 19 nm min −1 for 2000 W. This result can be comparable to those obtained with other configurations [10,13,15,20]. However, the use of an ICP source presents the advantage to reach this etch rate with a lower bias voltage.…”

Section: Pure Sicl 4 Plasmasupporting

confidence: 72%

“…The addition of complementary gases in the SiCl 4 plasma can drastically increase the etch rate of gallium nitride. In [16,20], the addition of a small flow of SF 6 to the SiCl 4 plasma increased the etch rate by a factor of 3. The authors in [16] explained this increase by the etching products: in the case of a SiCl 4 /SF 6 mixing, the etching products are GaCl 3 and NF 3 (T boiling = −129 • C at atmospheric pressure).…”

Section: Sicl 4 /Sf 6 Plasmamentioning

confidence: 99%

See 2 more Smart Citations

Effect of the addition of SF₆and N₂in inductively coupled SiCl₄plasma for GaN etching

Oubensaid¹,

Duluard²,

Pichon³

et al. 2009

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The GaN etching by SiCl 4 plasma is considered in an ICP tool. By respecting some material limitations, it has been possible to etch the gallium nitride in pure SiCl 4 plasma, with an etch rate of 19 nm min −1 . This result is comparable to other reported results. Thereafter, the combination of SiCl 4 with SF 6 and N 2 was tested in order to increase the etch rate. The addition of SF 6 in the plasma has enabled us to reach an etch rate of 53 nm min −1 . However, best results were obtained with the addition of N 2 , with an increase of the etch rate by a factor of 6. Mass spectrometry was also performed in order to determine the effects of the additional gases. The surface morphology of the GaN was also analysed by scanning electron microscope after etching.

show abstract

Section: Sicl 4 /Sf 6 Plasmasupporting

confidence: 84%

Section: Pure Sicl 4 Plasmasupporting

confidence: 72%

Section: Sicl 4 /Sf 6 Plasmamentioning

confidence: 99%

See 1 more Smart Citation

Effect of the addition of SF₆and N₂in inductively coupled SiCl₄plasma for GaN etching

Oubensaid¹,

Duluard²,

Pichon³

et al. 2009

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The MEMS were patterned using reactive ion etching with SiCl 4 :Ar:SF 6 plasma [6], released in HNA (HF:NOH 3 :CH 3 COOH [2:3:8]) solutions and rinsed in…”

Section: Methodsmentioning

confidence: 99%

Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)

Sillero¹,

López-Romero²,

Bengoechea³

et al. 2008

Phys. Status Solidi (c)

Self Cite

View full text Add to dashboard Cite

The fabrication of III-N MEMS test structures, such as cantilevers, beams and stress-pointers, and the modelling of their deformation due to residual stress relief, is presented. GaN and AlGaN/GaN structures were fabricated, either with one end and both ends clamped to the Si substrate (asymmetrical and symmetrical mechanical boundary conditions, respectively). The residual stress in the III-N layer was measured by photoluminescence and X-ray diffraction, and the stress relief induced deformation was analysed by a finite element method model. The deformations of the MEMS structures were used to calculate both the residual strains and the Youna's modulus of the material. One-end-clamped structures suffer from large deformations due to the uneven stress relaxation. During micromachining, the relaxation induces large upward buckling, as measured for fabricated devices and fitted by the FEM model. Two-end-clamped structures were also studied using different topologies and under-etching lengths of the clamped region. It is concluded that the deformation of such structures may be reduced with symmetrical mechanical boundary conditions and a small under-etched clamping region compared to the device dimensions.

show abstract

“…8,9) Several authors have reported on the etch-rate increase on GaN by adding up to 30% of fluorine to chlorine gas mixtures. 8,[10][11][12] Additionally, the formation of the chemically stable AlF 3 (sublimation point 1260 C) plays a crucial role in controlling the etch selectivity of materials with different aluminum content. 8,12) However, up to date almost no report is shown on the novel InAlN material.…”

Section: Introductionmentioning

confidence: 99%

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl₄and SF₆

Ostermaier

Pozzovivo

Basnar

et al. 2010

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

We have investigated an inductively coupled plasma etching recipe using SiCl4 and SF6 with a resulting selectivity >10 for GaN in respect to InAlN. The formation of an etch-resistant layer of AlF3 on InAlN required about 1 min and was noticed by a 4-times-higher initial etch rate on bare InAlN barrier high electron mobility transistors (HEMTs). Comparing devices with and without plasma-treatment below the gate showed no degradation in drain current and gate leakage current for plasma exposure durations shorter than 30 s, indicating no plasma-induced damage of the InAlN barrier. Devices etched longer than the required time for the formation of the etch-resistant barrier exhibited a slight decrease in drain current and an increase in gate leakage current which saturated for longer etching-time durations. Finally, we could prove the quality of the recipe by recessing the highly doped 6 nm GaN cap layer of a GaN/InAlN/AlN/GaN heterostructure down to the 2 nm thin InAlN/AlN barrier layer.

show abstract

GaN reactive ion etching using SiCl4:Ar:SF6 chemistry

Cited by 5 publications

References 9 publications

Effect of the addition of SF₆and N₂in inductively coupled SiCl₄plasma for GaN etching

Effect of the addition of SF₆and N₂in inductively coupled SiCl₄plasma for GaN etching

Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl₄and SF₆

Contact Info

Product

Resources

About

GaN reactive ion etching using SiCl4:Ar:SF6 chemistry

Cited by 5 publications

References 9 publications

Effect of the addition of SF6and N2in inductively coupled SiCl4plasma for GaN etching

Effect of the addition of SF6and N2in inductively coupled SiCl4plasma for GaN etching

Fabrication and stress relief modelling of GaN based MEMS test structures grown by MBE on Si(111)

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl4and SF6

Contact Info

Product

Resources

About

Effect of the addition of SF₆and N₂in inductively coupled SiCl₄plasma for GaN etching

Effect of the addition of SF₆and N₂in inductively coupled SiCl₄plasma for GaN etching

Characterization of Plasma-Induced Damage of Selectively Recessed GaN/InAlN/AlN/GaN Heterostructures Using SiCl₄and SF₆