GaN Schottky diodes for piezoelectric strain sensing

Strittmatter, Robert; Beach, Robin; Brooke, J. A.; Preisler, Edward; Picus, G. S.; McGill, T. C.

doi:10.1063/1.1558960

Cited by 23 publications

(7 citation statements)

References 10 publications

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“…A pure piezoelectric read out of mechanical sensors has not yet been reported for group III nitrides. An indirect effect was demonstrated by Strittmatter et al where piezoelectrically generated charges alter the depletion zone in GaN-MIS diodes for capacitive strain sensors [125,538], and in GaN Schottky diodes [125,539].…”

Section: Piezoelectric Cantileversmentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

350

217

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With the increasing requirements for microelectromechanical systems (MEMS) regarding stability, miniaturization and integration, novel materials such as wide band gap semiconductors are attracting more attention. Polycrystalline SiC has first been implemented into Si micromachining techniques, mainly as etch stop and protective layers. However, the outstanding properties of wide band gap semiconductors offer many more possibilities for the implementation of new functionalities. Now, a variety of technologies for SiC and group III nitrides exist to fabricate fully wide band gap semiconductor based MEMS. In this paper we first review the basic technology (deposition and etching) for group III nitrides and SiC with a special focus on the fabrication of three-dimensional microstructures relevant for MEMS. The basic operation principle for MEMS with wide band gap semiconductors is described. Finally, the first applications of SiC based MEMS are demonstrated, and innovative MEMS and NEMS devices are reviewed.

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Section: Piezoelectric Cantileversmentioning

confidence: 99%

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Cimalla¹,

Pezoldt²,

Ambacher³

2007

J. Phys. D: Appl. Phys.

350

217

View full text Add to dashboard Cite

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“…1 Most studies have focused on the built-in strain in nitride heterostructures, 2,3 but, in the case of GaN, the dependence of the Schottky barrier height on the polarity of the material has also been investigated. 4,5 Recently, Strittmatter et al 6 studied the frequency-dependent response of Schottky diodes on n-GaN to a small time-dependent harmonic stress. For the small strains relevant to that work, the Schottky barrier height could be assumed to remain constant.…”

mentioning

confidence: 99%

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

Liu

Kauser

Nathan

et al. 2004

Applied Physics Letters

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We report measurements of the Schottky barrier heights of Ni/Au contacts on Ga-polarity and N-polarity n-GaN under hydrostatic pressure and applied in-plane uniaxial stress. Under hydrostatic pressure the two different polarities of GaN yield significantly different rates of Schottky barrier height increase with increasing pressure. Uniaxial stress parallel to the surface affects the Schottky barrier height only minimally. The observed changes in barrier height under stress are attributed to a combination of band structure and piezoelectric effects.

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“…Gallium nitride was first largely used for UV-visible LED appliances but is also being considered for micro-electromechanical systems (MEMS) which include devices such as a range of sensors [2][3][4]. The elastic moduli of the material are necessary to determine the stresses associated with differential thermal expansions of epilayers during growth and for predicting of the response of gallium nitride based sensors and MEMS at elevated temperatures.…”

Section: Introductionmentioning

confidence: 99%

High Temperature Measurement of Elastic Moduli of (0001) Gallium Nitride

Hicks

Tabeart

Edwards

et al. 2012

Integrated Ferroelectrics

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This paper aims to review the consistency of existing GaN stiffness data and measure the high temperature elastic moduli of free-standing (0001) GaN. Dynamic mechanical thermal analysis (DMTA) and impact excitation were used to determine the E 33 elastic modulus at room temperature and at temperatures up to 550 • C. At room temperature, E 33 ranged from 304 GPa to 279 GPa depending on the specific sample and measurement method. Using DMTA and a calibration with silicon, the elastic modulus decreased by 2.17% between 100 • C and 500 • C, in close agreement with the literature. By testing samples cut at a range of crystal orientations the isotropy of the stiffness in the (0001) plane was confirmed.

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GaN Schottky diodes for piezoelectric strain sensing

Cited by 23 publications

References 10 publications

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications

Effects of hydrostatic and uniaxial stress on the Schottky barrier heights of Ga-polarity and N-polarity n-GaN

High Temperature Measurement of Elastic Moduli of (0001) Gallium Nitride

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