GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

Lingaparthi, Ravikiran; Radhakrishnan, K.; Dharmarasu, N.; Agrawal, M.; Wang, Zilong; Bruno, Annalisa; Soci, Cesare; Lihuang, Tng; Ang, Kian Siong

doi:10.1109/jsen.2016.2622279

Cited by 38 publications

(12 citation statements)

References 34 publications

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Section: Resultsmentioning

confidence: 99%

“…Figure 5 shows the spectral photoresponses of the samples with three different Al mole fractions from 300 nm to 410 nm. The spectral photoresponsivity (R) is calculated with the ratio of the measured output current for a given input optical power as follows [25]: Figure 5 shows the spectral photoresponses of the samples with three different Al mole fractions from 300 nm to 410 nm. The spectral photoresponsivity (R) is calculated with the ratio of the measured output current for a given input optical power as follows [25]:…”

Section: Resultsmentioning

confidence: 99%

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AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

Pandit

Cho

2018

Applied Sciences

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AlGaN semiconductors are promising materials in the field of ultraviolet (UV) detection. We fabricated AlGaN/GaN UV metal–semiconductor–metal (MSM) photodiodes with two back-to-back interdigitated finger electrodes comprising reduced graphene oxide (rGO). The rGO showed high transparency below the wavelength of 380 nm, which is necessary for a visible-blind photodetector, and showed outstanding Schottky behavior on AlGaN. As the photocurrent, dark current, photoresponsivity, detectivity, and cut-off wavelength were investigated with the rGO/AlGaN MSM photodiodes with various Al mole fractions, systematic variations in the device characteristics with the Al mole fraction were confirmed, proving the potential utility of the device architecture combining two-dimensional materials, rGO, and nitride semiconductors.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

Pandit

Cho

2018

Applied Sciences

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“…The responsivity ratio at 355 nm to 420 nm in the GaN-based photodiodes is defined as UV/visible rejection ratio. 24 The UV/visible rejection ratios 25 were measured as the value of 212 for the ST-PD and 1821 for the DBR-PD structures, respectively. In Figure 3c, the simulation results of the absorption spectra were calculated in the PD devices with and without the embedded reflector.…”

Section: Resultsmentioning

confidence: 99%

Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

Wang

Kao

et al. 2019

ACS Appl. Nano Mater.

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GaN-based ultraviolet photodiode with porous distributed Bragg reflectors (DBR) structure was demonstrated. The n +-AlGaN:Si epitaxial layers with high refractive index had been etched as porous-AlGaN layers with low refractive index through an electrochemical etched process. The peak wavelength of the responsivity spectra was measured at 355 nm, which was matched to the high reflectance wavelength region of the porous reflector. High photocurrent and large UV/visible rejection ratio were measured in the GaN photodiode with the porous-AlGaN reflector due to the light recycling process in the resonance cavity structure.

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“…In another report, the growth of GaN p-n junction on AlN/Si(111) and the effects of thermal annealing of the Ni/Ag contact electrodes on the photodetector applications have been explored by Yusoff et al [14]. Recently, Ravikiran et al [53] have demonstrated GaN UV PDs grown on AlN/Si(111) which exhibited a peak responsivity of 0.183 AW −1 at 15 V.…”

Section: Iii-nitrides-based Devicesmentioning

confidence: 99%

Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors

Singh¹,

Roul²,

Krupanidhi³

2021

Light-Emitting Diodes and Photodetectors - Advances and Future Directions [Working Title]

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In the last few decades, there has been a phenomenal rise and evolution in the field of III–Nitride semiconductors for optoelectronic applications such as lasers, sensors and detectors. However, certain hurdles still remain in the path of designing high-performance photodetectors (PDs) based on III-Nitride semiconductors considering their device performance. Recently, a lot of progress has been achieved in devices based on the high quality epilayers grown by molecular beam epitaxy (MBE). Being an ultra-high vacuum environment based-technique, MBE has enabled the realization of high-quality and highly efficient PDs which have exhibited competitive figures of merit to that of the commercial PDs. Moreover, by combining the novel properties of 2D materials with MBE-grown III-Nitrides, devices with enhanced functionalities have been realized which would pave a way towards the next-generation photonics. In the current chapter, the basic concepts about photodetection have been presented in detail, followed by a discussion on the basic properties of the III-Nitride semiconductors, and the recent advancements in the field of MBE-grown III-Nitrides-based PDs, with an emphasis on their hybrid structures. Finally, an outlook has been provided highlighting the present shortcomings as well as the unresolved issues associated with the present-day devices in this emerging field of research.

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GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

Cited by 38 publications

References 34 publications

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

AlGaN Ultraviolet Metal–Semiconductor–Metal Photodetectors with Reduced Graphene Oxide Contacts

Photon-Recycling in Ultraviolet GaN-Based Photodiodes with Porous AlGaN Distributed Bragg Reflectors

Group III-Nitrides and Their Hybrid Structures for Next-Generation Photodetectors

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