GaN/SiC MMICs and packaging for use in future transmit / receive modules

Oppermann, Martin; Thurow, Felix; Bunz, B.

doi:10.1109/estc.2014.6962788

Cited by 5 publications

(3 citation statements)

References 2 publications

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“…In order to achieve higher RF output power with higher efficiency, GaN technology is a very promising candidate for realizing designs, such as high efficiency tunable circuits, highly reconfigurable low noise power oscillators and integrated active beam forming transmit antenna arrays [35]. The current studies of this technology reveal that GaN has the potential to be the technology of choice for the next generation of transmitter/receiver (Tx/Rx) modules where high power/frequency applications [36]- [37] and several functionalities on the same chip [38] are required. intensively used for these systems at many frequency bands [41]- [42].…”

Section: List Of Tablesmentioning

confidence: 99%

“…In this same reference, a GaN-based high power amplifier with output power of 85 W and operating at S-band is reported. In 2014, an investigation [38] revealed that the next generation of GaN MMICs will cover more functionalities on the same chip.…”

Section: Use Of Gan In Reconfigurable Rf/microwavementioning

confidence: 99%

“…Multifunctional MMICs will allow very compact Tx/Rx module designs, and will reduce the number of active devices [38].…”

Section: Use Of Gan In Reconfigurable Rf/microwavementioning

confidence: 99%

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Design of GaN-based Microwave Components and Application to Novel High Power Reconfigurable Antennas

Hamdoun¹

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This thesis demonstrates the feasibility of using gallium nitride (GaN) technology in reconfigurable RF systems. GaN-based varactor diodes and switch circuits are pursued as promising candidates for high-power/high-frequency applications. The first part is devoted to active GaN device development. Active components were realized using the Canadian National Research Council (NRC) GaN HEMTs process. Based on three process, such as, GaN150v0 (gate length of 0.15um), GaN500v1 and GaN500v2 (both with gate length of 0.5um), many varactor diodes with size different have been manufactured and characterized via DC and RF smallsignal and large-signal measurements. Then, the varactor diodes were modeled by This thesis research has been conducted as a collaboration between University of Rennes 1 through "l'Institut d'Electronique et de Télécommunications de Rennes (IETR)", and Carleton University through the "Department of Electronics (DOE)". This collaboration is created from the PhD cotutelle (joint) program offered by both institutions. DOE has the expertise in CAD for electronic circuit design, RF and microwave circuits, photonics and integrated circuit using semiconductor technologies including GaN technology. A group of researchers from Carleton University is deeply involved in developing of circuits based on GaN technology.

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