An accurate large-signal model for AlGaN-GaN ICgda HEMT is presented. This model is derived from a distributed Cgdi small-signal model that efficiently describes the physics of the | ------l device. An improved drain current model accounts for trapping G Lg R | -r Ld D and self-heating effects is implemented. The model shows very Rd Ld > good results for simulating the high-power operation of a 8x125-Ggsf Cg ds Cds Pim gate width AlGaN-GaN HEMT even beyond the 1-dB gain R d GdsT 1 compression point.c ga Tpgi---
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