High power broadband GaN switch MMICs

Bunz, B.; Reber, Rolf; Schuh, Patrick; Oppermann, Martin

doi:10.1109/eumic.2015.7345095

Cited by 6 publications

(2 citation statements)

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“…High-power handling capabilities of GaN devices are advantageous for high-power amplifiers (HPA) [1][2][3], but also for switches [4,5] and robust LNAs [6,7]. All these devices are key components for T/R modules in AESA applications.…”

Section: Introductionmentioning

confidence: 99%

GaN-based single-chip frontend for next-generation X-band AESA systems

Schuh

Sledzik

Reber

2018

Int. J. Microw. Wireless Technol.

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A next generation of active electronically scanned array (AESA) antennas will be challenged with the need for lower size, weight, power, and cost. This leads to enhanced demands especially with regard to the integration density of the radio frequency-part inside aT/Rmodule. The semiconductor material GaN has proven its capacity for high-power amplifiers (HPA), robust receive components as well as switch components for separation of transmit and receive mode. This paper will describe the design and measurement results of a GaN-based single-chipT/Rmodule frontend (HPA, low noise anplifier, and single-pole double-throw (SPDT)) using UMS GH25 technology and covering the frequency range from 8 GHz to 12 GHz. The key performance parameters of the frontend are 13 W minimum transmit (TX) output power over the whole frequency range with peak power up to 17 W. The frontend in receive (RX) mode has a noise figure below 3.2 dB over the whole frequency range, and can survive more than 5 W input power. The large signal insertion loss of the used SPDT is below 0.9 dB at 43 dBm input power level.

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Section: Introductionmentioning

confidence: 99%

GaN-based single-chip frontend for next-generation X-band AESA systems

Schuh

Sledzik

Reber

2018

Int. J. Microw. Wireless Technol.

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“…Moreover, the wide bandgap of GaN ensures good hardness features for LNA, allowing the elimination of the limiter usually inserted to counteract effects of potential jammer threats. About the path selection circuitry, switches featured by power handling up to 100 W and insertion losses reaching 0.8 dB operating from the S‐ to the Ka‐bands can be found in the literature.…”

Section: Introductionmentioning

confidence: 99%

High power‐handling SPDT switch in 0.25‐µm GaN technology

Polli

Palomba

Colangeli

et al. 2018

Int J RF Microw Comput Aided Eng

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An asymmetrical switch architecture suitable for transmit/receive modules is proposed in this contribution. The design procedure and the comparison between simulations and measurements of a test circuit are provided. The switch handles an input power of 48.8 dBm at 0.1 dB power compression level and features a 31‐dB isolation together with an insertion loss less than 0.5 dB both in Rx‐ and Tx‐mode.

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