In this paper a novel approach for determining the four noise parameters of FET devices over frequency is presented. Such methodology is made of two parts: the first one allows to straightforwardly extract single-frequency noise parameters from source-pull data; the second one extends this capability to multi-frequency, source-pull data to obtain a full description of device noise behavior over frequency by means of at most 10 constant parameters (depending on the required accuracy). The whole process is automated via a software routine and does not need a previous knowledge of the FET equivalent circuit's topology, or the values of its elements. This peculiarity makes the proposed method very well suited to quick characterization campaigns of active devices, avoiding the burden of a whole set of prior, different measurements and the relevant, critical extraction procedures, which are strongly dependent on the device.

SUMMARYAn optimization-based method allowing a straightforward extraction of scalable small-signal equivalent-circuit models for high-frequency active devices is proposed. The approach only requires a set of devices with a fixed number of fingers and scaling unit gate widths: no dummy structures or bias conditions potentially harmful for the devices are needed. The extraction method is then demonstrated by presenting in full a sample extraction, carried out on a 0.25 GaN-on-SiC HEMT technology provided by Selex-ES. The example also includes the extraction of a noise model, by means of a well-known noise-temperature approach. Both the small-signal and noise models agree well with the experimental data.

The present contribution summarizes the activities performed towards the realization of a Single-Chip Front-End (SCFE) operating in C Band, integrating the High Power, Low Noise amplification and switching functionalities to be provided in modern T/R modules' Front-Ends for space SAR applications. The technologies adopted in this project are provided by United Monolithic Semiconductors (UMS) and Selex Electronic Systems (SLX), the GH25-10 0.25 µm gate length and the GaN technology featured by 0.5 µm gate length for UMS and SLX respectively. At the completion of the design phase two SCFEs have been designed in the two technologies, each in two slightly different versions, featured by state-of-the-art performance. In particular, in Tx-mode, both are featured by approximately 40 W power output, with 36 dB large-signal gain and 38 % / 27 % PAE for UMS and SLX versions respectively, while in Rx-mode 2.5 dB noise figure resulted, with robust operation. The two dies are featured by 6.9 × 5.4 mm2 and 7.28 × 5.40 mm2 for UMS and SLX versions respectively

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