2010 International Conference on Microwave and Millimeter Wave Technology 2010
DOI: 10.1109/icmmt.2010.5525238
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GaN technologies and developments: Status and trends

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Cited by 8 publications
(5 citation statements)
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“…Creation of traps can occur in both the AlGaN layer and the buffer, leading to reversible degradation of transconductance and saturated drain current [ 2 , 5 , 11 ]. GaN is a piezoelectric material and under high bias conditions, the electric field induces additional tensile stress to the already strained AlGaN layer [ 20 , 21 , 22 , 23 , 24 , 25 , 26 ]. Several authors have shown that upon reaching a “critical voltage”, irreversible damage to the device occurs resulting in defect formation through which electron leakage can occur [ 10 , 11 , 12 , 13 , 14 ].…”
Section: Gan Degradation Mechanismsmentioning
confidence: 99%
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“…Creation of traps can occur in both the AlGaN layer and the buffer, leading to reversible degradation of transconductance and saturated drain current [ 2 , 5 , 11 ]. GaN is a piezoelectric material and under high bias conditions, the electric field induces additional tensile stress to the already strained AlGaN layer [ 20 , 21 , 22 , 23 , 24 , 25 , 26 ]. Several authors have shown that upon reaching a “critical voltage”, irreversible damage to the device occurs resulting in defect formation through which electron leakage can occur [ 10 , 11 , 12 , 13 , 14 ].…”
Section: Gan Degradation Mechanismsmentioning
confidence: 99%
“…Permanent device degradation after high V DG stress under on-state conditions has been attributed to the presence of hot electrons. In GaAs-based devices, hot electrons generate holes which are accumulated by the gate and result in a negative shift in V T [ 25 , 26 , 27 ]. Typically, I G is used to derive the field-acceleration laws for failure.…”
Section: Gan Degradation Mechanismsmentioning
confidence: 99%
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“…In this light, Europe has been funding research project on GaN technologies for at least a decade [18,19], as well as a recent project specifically oriented to millimeter-wave applications through GaN-on-Si technologies, named MiGaNSOS (Millimeter wave Gallium Nitride Space evaluation and application to Observation Satellites) [20]. Among the project's objectives, the first consists in assessing and space-evaluating a state-of-the-art GaN-on-Si process for open foundry use, namely the 100 nm gate length GaN-on-Si technology developed by OMMIC (commercial name D01GH); at the same time, a preliminary assessment of its 60 nm evolution (D006GH) has been planned.…”
Section: Introductionmentioning
confidence: 99%
“…Numerous studies have investigated the role of device design (6,13,14), device structure (7,11,(15)(16)(17)(18), and bias conditions (4,(19)(20)(21) on the reliability of AlGaN/GaN HEMTs. From these studies, several degradation mechanisms have been reported in literature, ranging from hot carrier degradation, consumption of interfacial oxide layers below the gate resulting in shift of the Shottky barrier height, and even physical defect formation at the gate edges resulting in increased gate leakage (22)(23)(24).…”
Section: Introductionmentioning
confidence: 99%