GaN waveguides for on-chip quantum sources

Gallium Nitride Nanomaterials and Color Centers for Quantum Technologies

“…The bullseye nanostructure was then fabricated using EBL and dry etching with ICP RIE with a structure made of five circular trenches around the GaN SPSs etched to a depth of 240 nm with a GaN QD layer at 120 nm, as shown in Figure 6d− GaN is itself a material amenable for integrated photons due to the good quality of the GaNOI, and due to its noncentrosymmetric crystal structure, GaN possesses secondand third-order nonlinear coefficients, which makes it appealing for electrically tuned chip-based photonic applications as well as second-harmonic generation and quantumcorrelated photon sources. 120 GaNOI microresonators have reached an intrinsic quality factor of over 2.5 million with an optical loss of 0.17 dB cm −1 , and due to an experimentally deduced nonlinear index of GaN at telecom wavelengths n 2 = 1.4 × 10 −8 m 2 W −1 , several times larger than that of Si 3 N 4 , LiNbO 3 , and AIN, single soliton comb generation is implemented. GaNOl is, therefore, a promising platform for chip-scale nonlinear applications that could be beneficial for the light−matter interaction of quantum systems.…”

“…GaN is itself a material amenable for integrated photons due to the good quality of the GaNOI, and due to its noncentrosymmetric crystal structure, GaN possesses second- and third-order nonlinear coefficients, which makes it appealing for electrically tuned chip-based photonic applications as well as second-harmonic generation and quantum-correlated photon sources …”