GaN X-band 43% internally-matched FET with 60W output power

Kimura, Makoto; Yamauchi, K.; Yamanaka, Koji; Noto, Hifumi; Kuwata, Eigo; Otsuka, Hiroshi; Inoue, Akihisa; Kamo, Yoshitaka; Miyazaki, Moriyasu

doi:10.1109/apmc.2008.4957911

Cited by 11 publications

(3 citation statements)

References 5 publications

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“…This results in degraded power performance, rather than an optimized output power. Several design techniques are studied and published to resolve this problem [10,11,12,13].…”

Section: Power Amplifier Designmentioning

confidence: 99%

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

et al. 2018

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In this paper, we present a Ku-band 50 W internally-matched power amplifier that asymmetrically combines the power transistor cells of the GaN high electron mobility transistor (HEMT) (CGHV1J070D) from Wolfspeed. The amplifier is designed using a large-signal transistor cell model in the foundry process, and asymmetric power combining, which consists of a slit pattern, oblique wire bonding and an asymmetric T-junction, is applied to obtain the amplitude/phase balance of the combined signals at the transistor cell combining position. Input and output matching circuits are implemented using a thin film process on a titanate substrate and an alumina substrate with the relative dielectric constants of 40 and 9.8, respectively. The pulsed measurement of a 330 μs pulse period and 6% duty cycle shows the maximum saturated output power of 57 to 66 W, drain efficiency of 40.3 to 46.7%, and power gain of 5.3 to 6.0 dB at power saturation from 16.2 to 16.8 GHz.

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“…This results in degraded power performance, rather than an optimized output power. Several design techniques are studied and published to resolve this problem [10,11,12,13].…”

Section: Power Amplifier Designmentioning

confidence: 99%

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

et al. 2018

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“…최근 레 이더용 전력증폭기나 무선통신용 또는 무선에너지 송신 비콘용 고출력 전력증폭기는 내부 정합회로를 이용하여 설계하는 방식이 연구되고 있다 [1]～ [9] . 내부 정합회로가 지니는 장점으로는 첫째, 고효율 전력증폭기를 위해 주로 고조파 임피던스를 정합하게 되는데, 외부 정합회로만으 로 구현할 경우, 패키지 성분에 의해 차단 주파수의 영향 및 대역폭에 제한을 받게 된다.…”

Section: ⅰ 서 론unclassified

A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT

강현욱¹,

이휘섭²,

임원섭³

et al. 2016

The Journal of Korean Institute of Electromagnetic Engineering

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This paper presents a 2.65 GHz Doherty power amplifier with internally-matched GaN HEMT. Internal matching circuits were adopted to match its harmonic impedances inside the package. Simultaneously, due to the partially matched fundamental impedance, input and output matching networks become simpler. Bond wires and parasitic elements of transistor package were predicted by EM simulation. For the LTE signal with 6.5 dB PAPR, the implemented Doherty power amplifier shows a power gain of 13.0 dB, a saturated output power of 55.4 dBm, an efficiency of 49.1 %, and ACLR of -26.3 dBc at 2.65 GHz with an operating voltage of 48 V.

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“…AlGaN=GaN high-electron-mobility transistors (HEMTs) are now applied in high-power and high-frequency devices [1][2][3][4][5][6][7][8][9][10] owing to their high-density and high-speed two-dimensional electron gas (2DEG) and high electric breakdown field. Particularly, in the case of applying AlGaN=GaN HEMTs in high-frequency devices, Schottky contacts are often used for gate electrodes to prevent the increase in intrinsic gate capacitance.…”

Section: Introductionmentioning

confidence: 99%

Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors

Nanjo

Imai

Kurahashi

et al. 2016

Jpn. J. Appl. Phys.

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AlGaN/GaN high-electron-mobility transistors (HEMTs) with Schottky gate contacts are strong candidates for high-power applications with high-frequency operation. The existence of interfacial traps between Schottky gate contacts and an AlGaN surface is one of the issues causing relatively high gate leakage current in these HEMTs. High-temperature gate annealing, which reduces the density of traps owing to the interfacial reaction between Schottky gate contacts and an AlGaN surface, was investigated using a single-Ni-layer gate structure to prevent the alloying of conventional stacked metal layers such as Ni/Au and Pt/Au. As a result, a strong gate annealing temperature dependence of Schottky characteristics was observed and this dependence also caused drain current collapse. In addition, it was confirmed that 700 °C is the optimal gate annealing temperature for improving both the Schottky characteristics and drain current collapse. These results are attributed to the change in the density of interfacial trap states.

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GaN X-band 43% internally-matched FET with 60W output power

Cited by 11 publications

References 5 publications

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

Ku-Band 50 W GaN HEMT Power Amplifier Using Asymmetric Power Combining of Transistor Cells

A 2.65 GHz Doherty Power Amplifier Using Internally-Matched GaN-HEMT

Effect of high-temperature annealing for single-Ni-layer gate in AlGaN/GaN high-electron-mobility transistors

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