GaO_x@GaN Nanowire Arrays on Flexible Graphite Paper with Tunable Persistent Photoconductivity

Abstract

Flexible optoelectronic synaptic devices that functionally imitate the neural behavior with tunable optoelectronic characteristics are crucial to the development of advanced bioinspired neural networks. In this work, amorphous oxidedecorated GaN nanowire arrays (GaO x @GaN NWAs) are prepared on flexible graphite paper. A GaO x @GaN NWA-based flexible device has tunable persistent photoconductivity (PPC) and shows a conversible fast/slow decay process (SDP). Photoconductivity can be modulated by single or double light pulses with different illumination powers and biases. PPC gives rise to the highperformance SDP such as a long decay time of 2.3 × 10 5 s. The modulation mechanism is proposed and discussed. Our results reveal an innovative and efficient strategy to produce decorated NWAs on a flexible substrate with tunable optoelectronic properties and exhibit potential for flexible neuromorphic system applications.

Nanowires for UV–vis–IR Optoelectronic Synaptic Devices

“…[47] Furthermore, NWs can cover wide-ranging spectrum from UV to IR. Based on the band energy, GaN and oxide NWs (i.e., ZnO, Ga 2 O 3 , SnO 2 , MoO x ) show significant photo absorption to UV light; [33,[48][49][50] Perovskite, CdS, and CdSe are suitable for detecting visible light; [51][52][53] Besides, traditional Si and III-V semiconductors have been confirmed to be applied in IR. [51,[54][55][56][57] Actually, the spectral range of the materials is not limited by the band edge.…”