GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient

Döscher, Henning; Möller, K.; Hannappel, Thomas

doi:10.1016/j.jcrysgro.2010.10.132

Cited by 17 publications

(4 citation statements)

References 45 publications

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“…20 Figure 2(a) shows the characteristic RA spectrum of the dimerized, P-rich, c(4 × 2)/(2 × 2) reconstructed GaP(100) surface (thick gray line) which is typical for MOVPE preparation using H 2 as carrier gas. 21,22 Apart from the inherent temperature dependence of the involved electronic transitions, 23 atomic order at the surface, 24 local electric fields due to strain or doping, 25 and ordering effects 26 may also contribute to the RA spectra. To reduce the uncertainties due to doping or ordering, all our experiments were performed without intentional doping and the RA spectra were measured at room temperature.…”

Section: Methodsmentioning

confidence: 99%

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

et al. 2012

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We derive an analytical expression to extract the III-V/Si(100) surface and interface dielectric anisotropy from multisample optical in situ data. Based on the established preparation of P-rich GaP/Si(100) and GaP(100) surfaces in vapor-phase ambient, thin GaP films on Si(100) serve as a model system, where we demonstrate the decomposition of reflection anisotropy spectra to obtain surface and interface signals. The resulting surface dielectric anisotropy of P-rich GaP/Si(100) agrees well with that of a homoepitaxial P-rich GaP(100) reference due to consideration of antiphase disorder in our analytical approach. Hence, we are able to calculate interface dielectric anisotropy spectra of individual GaP/Si(100) samples. Their characteristic line shape provides in situ access to nucleation mechanisms in polar-on-nonpolar heteroepitaxy.

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Section: Methodsmentioning

confidence: 99%

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

et al. 2012

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“…Given the different lineshapes of the anisotropic fingerprints of the two surface reconstructions, RAS enables to study the transformation from P‐rich to In‐rich surfaces in great detail: Heating of the P‐rich surface above 370 °C without P stabilization results in enhanced P desorption and P depletion of the surface . RAS peaks originating from the occurrence of P dimers vanish and the lineshape changes toward that of the In‐rich surface.…”

Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

“…Continuously measured RA spectra during annealing of the GaP(100) surface in H ambient showed that P starts desorbing preferentially at temperatures beyond about 490 °C and that this causes a change from the P‐rich to the Ga‐rich surface reconstruction via an intermediate surface . In contrast to InP(100), surface preparation in N 2 ‐based ambient significantly impacts the surface formation . Upon annealing in N 2 , an additional intermediate surface phase occurs at temperatures above about 470 °C and below about 620 °C …”

Section: Epitaxial Reference Surfacesmentioning

confidence: 99%

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In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Supplie

May

Brückner

et al. 2017

Adv Materials Inter

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which he pioneered and established. In general, interfaces do not only determine electronic properties of the final device; their atomic order also highly affects growth kinetics and defect formation. Moreover, the design of solid-liquid and hybrid interfaces determines their chemical reactivity and stability. In situ monitoring of interface preparation, formation, and interfacial reactions thus promises efficient process control. Paired with a detailed understanding of interface formation mechanisms, however, the true power of in situ control is to allow for specific modification and tuning of interface formation for the device of choice. There are several excellent reviews on in situ approaches covering wide ranges of materials from basic science to applications as well as varieties of preparation and analysis techniques. [2][3][4][5][6][7][8][9][10][11] As indicated in Figure 1, this review will be focused on in situ control over interfaces of materials that are relevant for photoinduced reactions in high-efficiency solar energy conversion and sensing applications with in situ control of semiconductor/polymer/ biological interfaces. We will restrict the techniques to realistic and complex, non-ultrahigh-vacuum (UHV) ambient, where in situ control is most demandingbut also highly desired. The more complex the interfacial reactions are, the more important is the in situ characterization. Ex situ approaches can contribute to an indirect understanding of interface formation, but to understand and, finally, control the dynamic processes taking place, real-time measurements are appropriate. The challenge, we are facing, is twofold: On the one hand, increased interaction with the surrounding ambient causes higher complexity. Yet at the same time, it decreases the number of applicable techniques. On the other hand, those techniques are often elaborate and not necessarily easy to interpret. In a nutshell, we will discuss four main topics:(i) Surface preparation during growth of structures for highefficiency solar energy conversion: World-record conversion efficiencies in both photovoltaics [12,13] and solar water splitting [14] are achieved with multijunction solar cells based on epitaxial III/V compound semiconductor structures. We will discuss in situ controlled preparation Solar energy conversion and photoinduced bioactive sensors are representing topical scientific fields, where interfaces play a decisive role for efficient applications. The key to specifically tune these interfaces is a precise knowledge of interfacial structures and their formation on the microscopic, preferably atomic scale. Gaining thorough insight into interfacial reactions, however, is particularly challenging in relevant complex chemical environment. This review introduces a spectrum of material systems with corresponding interfaces significant for efficient applications in energy conversion and sensor technologies. It highlights appropriate analysis techniques capable of monitoring critical physicochemical reactions in situ during non-vacuu...

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Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO₂ Interface

Diederich,

Rojas,

Paszuk

et al. 2024

Adv Funct Materials

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The current efficiency records for generating green hydrogen via solar water splitting are held by indium phosphide (InP)‐based photo‐absorbers, protected by TiO2 layers grown through atomic layer deposition (ALD). InP is also a leading material for photonic integrated circuits and computing, where ultrafast near‐surface behavior is key. A previous study described electronic pathways at the phosphorus‐rich (P‐rich) surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE) spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface modified with ALD‐deposited TiO2 are explored. Photoexcited bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states and surface states and inject into the TiO2 conduction band (CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO2 adlayers are observed, with discrete states preserved up to 10 nm TiO2 deposition. Thermalization lifetimes of excited electrons > 0.8 eV above the InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm. Annealing at 300 °C to achieve crystalline TiO2 reconstructions destroys interfacial states, affecting charge transfer. These observations enable innovative engineering of the P‐rich InP/TiO2 heterointerface, opening new possibilities for studying hot‐carrier extraction, adsorbate effects, surface plasmons, and improving photovoltaic and PEC water‐splitting devices.

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GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient

Cited by 17 publications

References 45 publications

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO₂ Interface

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GaP(1 0 0) and InP(1 0 0) surface structures during preparation in a nitrogen ambient

Cited by 17 publications

References 45 publications

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

In situaccess to the dielectric anisotropy of buried III-V/Si(100) heterointerfaces

In Situ Characterization of Interfaces Relevant for Efficient Photoinduced Reactions

Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2 Interface

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Product

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Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO₂ Interface