GaP-nucleation on exact Si (001) substrates for III/V device integration

Epitaxial growth of antiphase boundary free GaAs layer on 300 mm Si(001) substrate by metalorganic chemical vapour deposition with high mobility

“…This observation is similar to those previously reported by Stolz et al on the MOCVD epitaxy of GaP on silicon. 17,31,32 In their experiment, they have to grow first a thick Si-buffer and anneal it at high temperature to be able to obtain the right Si surface preparation and reconstruction prior to GaP heteroepitaxy. Our process is simpler and better suited for industrial purpose as it eliminates the Si buffer growth and annealing to obtain an APB-free material.…”

Epitaxial growth of GaSb and InAs fins on 300 mm Si (001) by aspect ratio trapping

“…One possible solution is to grow III-V epitaxial structures on their native substrates and use bonding techniques to integrate them on silicon; heterogeneous integration of GaInAsSb photodiodes system on Si, was demonstrated under pulsed conditions. Another result worth mentioning involved the combination of both MBE and Metal-Organic Chemical Vapor Deposition (MOCVD), and used a GaP/Si (001) [19] on-axis template for the epitaxial growth of a high electron mobility AlSb/InAs heterostructure [20]. However, very few studies focused on the direct growth of GaSb on Si by MOCVD.…”

Atomistic calculations of Ga(NAsP)/GaP(N) quantum wells on silicon substrate: Band structure and optical gain

“…2 This issue is prohibitive to develop both types of applications: efficient electrically pumped lasers on silicon and high efficiency multijunction solar cells. Recently, the epitaxial growth on Si substrate of the quasi lattice-matched GaP and perfectly lattice-matched GaPN 0.02 layers has been greatly improved [3][4][5] allowing for GaPN-based active areas to efficiently emit light. 6 Among them, quaternary Ga(NAsP) quantum wells (QWs) have shown to be reliable in both electrically pumped laser on GaP (Ref.…”