GaP semiconducting-to-metal transition near 220 kbar and 298°K

Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

“…The transition from semiconducting to the metallic phase around 22 GPa has been confirmed repeatedly by previous studies [e.g. 2,6,[10][11][12][13][14][15]. Although the physical properties of GaP at high pressures have been investigated repeatedly, most studies have been performed at ambient temperature.…”

“…Previous studies used two types of methods for the estimation of the sample pressure. Homan et al [11] and Bundy [6] used resistivity changes in several materials for the pressure calibrations. It is likely that this method has a significant uncertainty, and the discrepancy for the transition pressure between 22 and 24 GPa is within the scope of the assumption (Table 1).…”

Pressure dependent elastic and structural (B3–B1) properties of Ga based monopnictides

“…Earlier Singh and Singh [10] employed a charge transfer effect through three-body interactions to depict the phase diagram and elastic properties of III-V semiconducting compounds as GaAs, GaSb, GaP, InAs, InSb, and InP. The electrical resistivities of GaAs and GaP drops discontinuously to several orders of magnitude at the transition pressures; therefore the phase transitions in GaAs and GaP can be conveniently studied by resistivity measurements [11,12]. Experimentally, all three compounds adopt the zinc-blende structure at low and moderate pressures.…”

High-pressure elastic properties of gallium phosphide

“…8 The transition to the metallic phase was first observed in resistivity measurements, 9,10 and then by x-ray diffraction. [11][12][13] The elastic properties were studied under hydrostatic and uniaxial pressures up to about 0.14 GPa using ultrasonics.…”