Gas cluster ion beam processing equipment

Bachand, J.; Freytsis, A.; Harrington, E.; Gwinn, M.; Hofmeester, N.; Hautala, J.; Mack, M.; Regan, K.

doi:10.1109/iit.2002.1258094

Cited by 3 publications

(3 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Details of GCIB system has been already reported previously. [23][24][25] In this study, Ar-GCIB was used as a source gas. Neutral Ar cluster beam was formed by supersonic expansion of high-pressure Ar through a nozzle.…”

Section: Methodsmentioning

confidence: 99%

Irradiation Effects of Gas Cluster Ion Beams on Co–Fe Films

Toyoda¹,

Fujimoto²,

Yamada³

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Irradiation effects of gas cluster ion beam (GCIB) were studied on Co3Fe7 films as a novel etching process. Etching depth of Co3Fe7 increased with increasing the acceleration voltage (V a) and the ionization electron voltage (V e), however, there is a tradeoff between etching rate and the surface roughness. Because multiply charged GCIBs were formed at high V e (200 V), the surface layer and interface became rough. When low V e (50 V) was applied for ionization of Ar-GCIB, crystalline CoFe2O4 layer (10 nm thick) was formed by Ar-GCIB irradiations at room temperature. Oxidation was due to water vapors during GCIB irradiation, which will be eliminated in ultra high vacuum. It is expected that gentle etching of magnetic films is possible with Ar-GCIB ionized at low V e.

show abstract

Section: Methodsmentioning

confidence: 99%

Irradiation Effects of Gas Cluster Ion Beams on Co–Fe Films

Toyoda¹,

Fujimoto²,

Yamada³

2013

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

show abstract

“…The samples investigated were Ar and B gas cluster ion implanted Si fabricated using a GCIB developed by TEL Epion. 24) The basic design of this system is similar to that developed by Kyoto University, and it is described in detail elsewhere. 1) Neutral clusters were generated by adiabatic expansion of gas into a vacuum chamber, and they were ionized by electron bombardment.…”

Section: Methodsmentioning

confidence: 99%

Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams

Uedono

Moriya

Tsutsui

et al. 2012

Jpn. J. Appl. Phys.

View full text Add to dashboard Cite

Vacancy-type defects in Ar and B gas cluster ion-implanted Si were probed by monoenergetic positron beams. The acceleration energy of the clusters ranged between 20–60 keV, and the mean cluster size was 2×103 atoms. Doppler broadening spectra of the annihilation radiation were measured, and the vacancy-rich region was found to localize at a depth of 0–13 nm. Measurements of the lifetime spectra of positrons revealed that two different defect species coexisted in the damaged region introduced by Ar gas cluster implantation, and these were identified as divacancy-type defects and large vacancy clusters filled with Ar. The formation of the vacancy clusters was attributed to extremely high temperature and its rapid transients in impact regions of Ar cluster ions. For B gas cluster ion implanted Si, the detected momentum distribution of electrons in the damaged region was broader than that in the defect free Si, suggesting that the trapping of positrons by open spaces adjacent of B clusters.

show abstract

“…As a consequence of locally high temperatures in the impact craters such GCIB beams can be used to perform well controlled directional chemistry. This paper discussed the beamline of the commercial GCIB processing equipment that has been developed by Epion Corporation [7].…”

Section: Introductionmentioning

confidence: 99%

Design issues in gas cluster ion beamlines

Mack¹,

Becker²,

Gwinn³

et al. 2002

Ion Implantation Technology. 2002. Proceedings of the 14th International Conference On

Self Cite

View full text Add to dashboard Cite

The design of gas cluster ion beam (GCIB) equipment is complicated by a number of issues unique to such beams. lon charge and mass are typically not known but instead follow rather broad distributions. Space charge becomes important at much lower current levels than in implant equipment due to the very high mass of the ions. The beam, itself, transports a significant amount of gas and this gas load must be taken into account in the design. The novel issues of GCIB are discussed here and solutions are presented.

show abstract

Gas cluster ion beam processing equipment

Cited by 3 publications

References 8 publications

Irradiation Effects of Gas Cluster Ion Beams on Co–Fe Films

Irradiation Effects of Gas Cluster Ion Beams on Co–Fe Films

Vacancy-Type Defects Introduced by Gas Cluster Ion-Implantation on Si Studied by Monoenergetic Positron Beams

Design issues in gas cluster ion beamlines

Contact Info

Product

Resources

About