Gas Flow Characteristics in a Plasma Process Chamber and Proposal of New Pulse-Controlled Gas Injection Method Using Interference Matrix Operation for Rapid Stabilization of Gas Pressure

Effect of Process Temperature of Al2O3 Atomic Layer Deposition Using Accurate Process Gasses Supply System

“…HT-FCS is an upgraded version of FCS system which was developed to realize accurate gas supply. FCS system incorporates the flow controller based on pressure control in a region upstream of an orifice (11), which can supply gases into the chamber without an uncontrollable overshoot of the gas flow (8)(9)(10)(11)(12). So far, FCS system could not be used for heated gases such as directly vaporized MOCVD gasses with low vapor pressure.…”

“…During the dielectric formation process, gas flow control is an important factor that influences the concentration of process gas and the pressure of the process chamber (8)(9)(10)(11)(12). Additionally, controlling the gas flow accurately makes process costs lower, because the minimum necessary source gas is used at each cycle of ALD.…”

“…Atomic layer deposition (ALD) is one of the most promising dielectric formation methods for MIM capacitors, because good step coverage is obtained and the process temperature is relatively low (5)(6)(7). During the dielectric formation process, gas flow control is an important factor that influences the concentration of process gas and the pressure of the process chamber (8)(9)(10)(11)(12). Additionally, controlling the gas flow accurately makes process costs lower, because the minimum necessary source gas is used at each cycle of ALD.…”