Gas flow optimization during the cooling of multicrystalline silicon ingot

Wang, S.; Fang, Haisheng; Zhao, CY; Zhang, Z.; Zhang, M.J.; Xu, Jingying

doi:10.1016/j.ijheatmasstransfer.2015.01.035

Cited by 22 publications

(3 citation statements)

References 13 publications

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“…As the maximum dislocation agglomerates density appeared in the central of ingot, brick C15 was chosen to test the dislocation agglomerates density. In the PL image of silicon wafers, the ratio of dark patterns area to the whole wafer area represents dislocation agglomerates density level [7], which could be used as evaluation criterion to track dislocation propagation trend along the growth direction. As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Zhou et al [5,6] proposed a modified cooling process with lower temperatures of both thermocouples 1 and 2, and they found that the final dislocation density could be reduced significantly with the modified cooling process. Wang et al [7] investigated the effect of gas velocity on the thermal stress during the cooling process, and concluded that a fast gas inlet at the initial cooling changing a slow gas inlet at the later stage of cooling by a certain ramping-down rate is conducive to reduce the stress level. Some improved…”

Section: Introductionmentioning

confidence: 99%

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Effect of Side Insulation on Stress and Dislocation in the Multi-crystalline Silicon Ingot during Cooling Process

Zhou¹,

Wenliang²,

Dong³

et al. 2017

JMSE-B

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Haasen-Alexander-Sumino model was applied to analyze the effects of the side insulation on thermal stress and dislocation density in silicon crystal during the cooling process. The simulation results showed that the side insulation being immobile initially and then rapidly moving up was the most favorable for the cooling process due to the low thermal stress and dislocation density were obtained. The optimized design was implemented in casting experiments, and the experimental results showed that the high-performance multi-crystalline silicon ingot had a lower dislocation agglomerates density. The average conversion efficiency of solar cells was about 0.05% higher with the optimized cooling process (18.43%) than with the original cooling process (18.38%).

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Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of Side Insulation on Stress and Dislocation in the Multi-crystalline Silicon Ingot during Cooling Process

Zhou¹,

Wenliang²,

Dong³

et al. 2017

JMSE-B

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“…Основным процессом при росте кристаллов является теплообмен, кристаллизация чистого вещества определяется только полем температуры. Есть исключения: эпитаксия в реакторах с горячей стенкой [91], рост из раствора [92], включая кристаллизацию белков [110,111].…”

Section: математические моделиunclassified

Simulation of Single Crystal Growth: Heat and Mass Transfer

Zhmakin¹

2015

Preprint

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Представлен обзор современного состояния моделирования роста объемных монокристаллов полупроводников и диэлектриков из расплава и газовой фазы в рамках моделей механики сплощной среды. Рассмотрены механизмы теплообмена теплопроводностью, конвекцией, излучением, показана необходимость корректного описания оптических свойств кристаллов (полупрозрачность, наличие диффузно и зеркально отражающих поверхностей), обсуждены вопросы характеризации качества монокристаллов, проблемы верификации моделей, особенности программного обеспечения, предназначенного для фундаментальных и прикладных исследований.

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